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A 93-channel multiwavelength laser with maximum channel intensity non-uniformity of 3.0 dB over a wavelength range from 1638 to 1646 nm was demonstrated on the basis of a single 4500 µm-long InAs/InGaAsP quantum dot Fabry-Perot cavity chip. All channels were stable because of inhomogeneous gain broadening due to statistically distributed sizes and geometries of self-assembled quantum dots. [ABSTRACT FROM AUTHOR]

A highly efficient non-degenerate four-wave mixing (FWM) process using CW pump and probe signals around the L-band wavelength range in an InAs/InGaAsP quantum dot semiconductor optical amplifier (QD-SOA) is experimentally demonstrated for the first time. The preliminary experimental results indicate that the FWM efficiency using QD-SOA is independent of the sign of the frequency detuning and decreases by less than 20 dB/decade with frequency detuning increasing. [ABSTRACT FROM AUTHOR]

The first 1.55 μm room-temperature continuous-wave (CW) operation of GaAs-based laser diodes utilising Ga1nNAsSb/GaNAs double quantum well active regions grown by molecular beam epitaxy is reported. In electrically-pumped CW operation the narrow ridge waveguide devices have a room temperature lasing wavelength of 1550 nm near threshold, increasing to 1553 nm at thermal rollover. The CW threshold current was 132 mA for a 3 × 589 μm device, with a characteristic temperature of 83 K, measured in pulsed mode between 20 and 70°C. [ABSTRACT FROM AUTHOR]

A high performance ridge-waveguide InAs/InP quantum dot distributed feedback laser around 1.52 µm with a cavity length of 1 mm and a stripe width of 3 µm is demonstrated. In continuous-wave operation singlemode output power was up to 18.5 mW and its sidemode suppression ratio was greater than 62 dB. The relative intensity noise was measured to be less than -154 dB/Hz from 10 MHz to 10 GHz, and the optical linewidth smaller than 150 kHz when the injection current was 200 mA at room temperature of 18°C. [ABSTRACT FROM AUTHOR]