1. Thermal resistance of AlGaN/GaN HEMTs on SopSiC composite substrate
- Author
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Nicolas Defrance, J.C. De Jaeger, Virginie Hoel, M. Rousseau, Robert Langer, Hacene Lahreche, Ali Soltani, Y. Douvry, J.-C. Gerbedoen, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)
- Subjects
010302 applied physics ,Materials science ,Silicon ,business.industry ,Aluminium nitride ,Thermal resistance ,020208 electrical & electronic engineering ,chemistry.chemical_element ,Gallium nitride ,02 engineering and technology ,Substrate (electronics) ,High-electron-mobility transistor ,7. Clean energy ,01 natural sciences ,chemistry.chemical_compound ,chemistry ,0103 physical sciences ,0202 electrical engineering, electronic engineering, information engineering ,Electronic engineering ,Optoelectronics ,Wafer ,Electrical and Electronic Engineering ,business ,Layer (electronics) - Abstract
In this reported work, the thermal resistance of AlGaN/GaN HEMTs processed on SopSiC composite substrate is determined by electrical I-V pulsed measurement. SopSiC substrate is based on an innovative structure with a thin Si single crystal layer transferred on top of a thick polycrystalline SiC wafer. For the first time, it is demonstrated that the thermal resistivity of such devices reaches 18.9 K·mm/W when 7.5 W/mm power is dissipated, while 23.5 K·mm/W are measured on silicon in the same conditions. This result shows the capabilities of composite substrates to compete with silicon for microwave power applications.
- Published
- 2010