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Start Over Author "Macaluso, R." Journal electronics letters
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4. Resistive switching behaviour in ZnO and VO 2 memristors grown by pulsed laser deposition

Author

Roberto Macaluso, F. Di Quarto, Giuseppe Lullo, Mauro Mosca, A. D'Angelo, Vincenzo Costanza, Fulvio Caruso, F. Di Franco, Monica Santamaria, Claudio Cali, Macaluso, R, Mosca, M, Costanza, V, D'Angelo, A, Lullo, G, Caruso, F, Calì, C, Di Franco, F, Santamaria, M, and Di Quarto, F

Subjects
Laser ablation, Materials science, business.industry, Wide-bandgap semiconductor, Memristor, Laser, Settore ING-INF/01 - Elettronica, Active devices, Pulsed laser deposition, law.invention, Memristors, Non volatile memory, ZnO, VO2, PLD, law, Resistive switching, Electronic engineering, Optoelectronics, Electrical and Electronic Engineering, business, Microscale chemistry
Abstract

The resistive switching behaviour observed in microscale memristors based on laser ablated ZnO and VO 2 is reported. A comparison between the two materials is reported against an active device size. The results show that devices up to 300 × 300 μm 2 exhibit a memristive behaviour regardless of the device size, and 100 × 100 μm 2 ZnO-based memristors have the best resistance off/on ratio.

Published
2014

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