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In this work, monolithic mode-locked GaSb-based lasers at 1.7 µm emission wavelength with heterodyne measurement of the frequency comb are presented. Mode-locking operation was confirmed by measuring the optical beatnote at the round-trip frequency of 9.56 GHz and analysing the frequency comb. Mode-locking operation occurred from 0.1 to 3.3 V reverse bias voltages at the absorber section and driving currents from 160 to 400 mA at the laser section with a minimum beatnote width of 6.6 kHz. The frequency comb spans over 13 nm with a mode spacing of 0.10 nm, measured by heterodyne-detection with a distributed feedback laser.

Long wavelength distributed feedback (DFB) laser diodes based on InP quantum dash-in-a-well material have been fabricated and investigated at room temperature under continuous-wave operation. Singlemode emission of InP laser diodes at wavelengths above 2 µm is demonstrated for the first time.

A 2 mum semiconductor disk laser with a tuning range of 35 nm and output power exceeding 500 mW is reported. The method for generating wavelength-tunable radiation is based on self-seeding the disk laser using optical feedback from a diffraction grating

Room-temperature continuous-wave operation of a singlemode GaInAsSb/GaSb/AlGaAsSb distributed feedback (DFB) laser is presented at a record long emission wavelength for this material system of 2.843 /spl mu/m. The threshold current at 20/spl deg/C is 75 mA. Mode selection was realised by metal gratings laterally patterned to a ridge waveguide. By varying the grating period, DFB emission from 2.738 up to 2.843 /spl mu/m is obtained.

Two-segment distributed feedback (DFB) GaAs/AlGaAs bound-to-continuum quantum cascade lasers emitting at ∼10.8 µm were fabricated and investigated. Reversible switching between two different DFB modes by current injection control yielding sidemode suppression ratios up to >23 dB is reported. Two different devices were fabricated for which the distance between the different DFB modes is 1.5 and 2.5 cm−1, respectively, and quasi-continuous tuning over a range of >9 cm−1 (105 nm) between 120 and 250 K was observed.

Long wavelength monomode InGaAs/GaAs quantum dot (QD) distributed feedback (DFB) lasers with emission wavelength around 1325 nm are presented. Threshold currents below 19 mA for operating temperatures up to 70degC and output powers of 10 mW at 25degC (6 mW at 70degC) are observed. Error-free 10 Gbit/s transmission over 21 km fibre with an extinction ratio of 8.5 dB at room temperature (5.1 dB at 70degC) is demonstrated. The low threshold, low temperature sensitivity and high modulation speed were realised using complex coupled DFB lasers with ten stacks of self-organised MBE-grown QD layers and p-type modulation doping