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Your search keyword '"J.E. Bowers"' showing total 3 results
Start Over Author "J.E. Bowers" Journal electronics letters
3 results on '"J.E. Bowers"'

1. Monolithic integration of high linearity attenuated counter-propagating optical phase-locked loop coherent receiver

Author

J.E. Bowers, Larry A. Coldren, Yifei Li, A. Bhardwaj, Shilei Jin, Peter R. Herczfeld, and Renyuan Wang

Subjects
Physics, Spurious-free dynamic range, Physics::Instrumentation and Detectors, Dynamic range, business.industry, Detector, Shot noise, Linearity, Integrated circuit, law.invention, Loop (topology), Phase-locked loop, Optics, law, Electrical and Electronic Engineering, business
Abstract

The first monolithically integrated attenuated counter-propagating optical phase-locked loop based coherent receiver is presented. A spurious-free dynamic range of 131.3 dB Hz 2/3 is measured in the detector shot-noise limit at 100 MHz, which is the highest reported for a single-chip device.

Published
2011
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3. Low threshold 1.5 μm quantum well lasers grown by atmospheric pressure MOCVD with tertiarybutylarsine (TBA) and tertiarybutylphosphine (TBP)

Author

Steven P. DenBaars, A.L. Holmes, M.E. Heimbuch, M.P. Mack, J.E. Bowers, and Larry A. Coldren

Subjects
Materials science, Atmospheric pressure, business.industry, Analytical chemistry, Chemical vapor deposition, Epitaxy, Gallium arsenide, Semiconductor laser theory, chemistry.chemical_compound, Arsine, chemistry, Optoelectronics, Metalorganic vapour phase epitaxy, Electrical and Electronic Engineering, business, Quantum well
Abstract

TBA and TBP are liquid organometallic sources that are a safer alternative to arsine and phosphine. Using TBA and TBP, we have successfully grown lattice matched In0.53Ga0.47As/InP single quantum well lasers emitting at 1.5 μm with a threshold current density of 220 A/cm2 for broad area devices 3.5 mm in length.

Published
1993
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