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Ho, Mn, and Ho, Mn co-doped BiFeO3thin films were deposited on Pt (100)/Ti/SiO2/Si substrates using solution gelation. The ferroelectric fatigue properties were clearly improved after doping with Ho and Mn. The doped BiFeO3thin film displayed more strongly increased ferroelectric, leakage current, and fatigue properties compared with the pure BiFeO3thin film. Thus, the improved performance of the BiFeO3thin films depends on the structural transformation and reduced oxygen vacancy concentration. The present work provides a feasible approach to enhance the ferroelectric and fatigue properties of BiFeO3-based thin films.