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Glass frits are used widely in the VFD, PDP, LCD, and OLED displays, solar cells, and automobiles. It is essential for glass frits to exhibit material properties such as low melting temperatures and coefficient of thermal expansion close to glass to prevent thermal shock and to lower the thermal stress. Glass frit containing 60%–85% of PbO lowers the melting temperature. However, PbO causes environmental pollution. In this study, we developed P2O5-SnO2-B2O3glass frits and carried out life tests on these systems. In addition, life tests were also carried out on Pb-containing glass frits (VFD) for comparison to predict the life of the P2O5-SnO2-B2O3systems. Subsequently, the failure mechanisms of VFD and Pb-free P2O5-SnO2-B2O3glass frits were analyzed.

Abstract: The etch characteristics of high-k dielectric HfO2 films and the etch selectivity for HfO2 over Si in fluorine-and chlorine-based inductively coupled plasmas have been studied. Fluorine-based ICP discharges produced practical and controllable etch rates and the etched HfO2 surfaces sustained similar or better RMS roughness values than that of the unetched control sample under most of the conditions examined. Anisotropic pattern transfer with a vertical sidewall profile (θ = 97°) was performed in CF4/Ar ICP discharges and no significant change in the dielectric property of HfO2 films was detected. 5Cl2/10O2 ICP discharges produced high etch selectivities > 6.3 (max. ∼7.6) for HfO2 over Si.