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Porous Silicon as regular nanostructured material is used for an electrochemical preparation of different binary and ternary nanostructured compound systems. The nanostructured films are analysed by means of XPS and sputter depth profiling.

The anodic oxidation of silicon in a 0.04 N solution of potassium nitrate in ethylene glycol with small amounts of water is a hole consuming process. Therefore, n-type silicon, anodically biased, behaves in the dark in many respects as a reverse biased diode. Under steady-state conditions a certain, in general a very low electrochemical reaction rate is established. If the sample is locally implanted with ions or locally illuminated the ion implanted or illuminated regions can serve as an additional source of minority carriers and show a faster oxidation rate than the nonimplanted or nonilluminated areas. The influence of radiation damage as well as of a focused laser beam (radius 4 μm) on the local oxidation of anodically biased n-type silicon is discussed. The electrophysical properties of the silicon/anodic oxide interface are investigated by forming Metal/Oxide/Semiconductor (MOS) structures.