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Novel fluorine doped zinc tin oxide (ZTO:F) thin-film transistor (TFT) was fabricated by an aqueous sol-gel method and their bias-temperature-illumination stability were observed. ZTO:F TFT optimized at Sn:Zn = 1:1 composition exhibits high field-effect mobility of 11.52 cm2/Vs at a process temperature of 350°C. In particular, the TFT displays a small negative threshold voltage shift of approximately 1 V under positive bias-temperature-illumination stress. This is attributed to asymmetry of the recombination for photo-generated holes with the free electrons at the ZTO:F channel/gate dielectric interface due to the substitution of oxygen by fluorine with different electrovalence.

C using an ultraviolet(UV) photo-annealing process. A stable ZTO sol-gel solution was produced and showed considerable absorption in UV due to theincorporation of a chelating agent, acetylacetone, which also acts as a UV-activator. The UV photo-annealing and vacuum annealingimprove the electrical performance of the ZTO TFT with mobility of 2 cm

Thin-film transistors (TFTs) with indium based metal oxide, aluminum indium oxide, channel layers were fabricated via a simple and low-cost solution process. The process temperature was reduced to 250°C, an applicable temperature to plastic substrates, by applying post-annealing. Post-annealing under various atmospheric conditions effectively converts the remaining In(OH) species to a metal oxide at low temperature. It was revealed that humid O2 post-annealing mostly facilitated the conversion of In(OH) species to a metal oxide. The optimized low temperature (i.e., 250°C) solution processed AIO TFT exhibits a channel mobility of 2.37 cm2/Vs, a sub-threshold slope of 0.6 V/decade, and an on-to-off current ratio greater than 106.

We fabricated zinc tin oxide (ZTO) thin film transistors (TFTs) using a stable ZTO sol―gel solution at a low annealing temperature of 300°C. To enhance transistor performance, the ZTO films were postannealed under vacuum and wet air consecutively. The vacuum and wet air postannealed ZTO TFTs exhibited high saturation mobilities (5.5 cm 2 /V s), low subthreshold swing (0.38 V/dec), and high on―off current ratio (8 × 10 8 ). We analyzed the ZTO films before and after postannealing by X-ray photoelectron spectroscopy to explain the origin of the enhanced performance.

Thin-film transistors (TFTs) with aluminum indium oxide channel layers were fabricated via a simple and low cost solution process. The substitution of Al on In sites in the In 2 O 3 lattice was verified by X-ray diffraction analysis. The maximum heat-treatment temperature of these transistors was 350°C, and the resultant thin films were highly transparent (with >90% transmittance). The fabricated TFTs operated in an enhancement mode on a positive bias and showed an n-type semiconductor behavior. They exhibited a channel mobility of 19.6 cm 2 /V s, a subthreshold slope of 0.3 V/decade, and an on-to-off current ratio greater than 10 8 .