1. Charateristics of Low Temperature High Quality Silicon Oxide by Plasma Enhanced Atomic Layer Deposition with In Situ Plasma Densification Process
- Author
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Hai-Won Kim, Shin Seung-Woo, Jeong Choon-Sik, Wooduck Jung, Hwang Han-Na, Ryong Hwang, Ilsub Chung, Park Seong-Jin, and Sergey N. Zaretskiy
- Subjects
Materials science ,business.industry ,Chemical shift ,Radical ,Binding energy ,Electrical engineering ,Analytical chemistry ,chemistry.chemical_element ,Plasma ,Oxygen ,Atomic layer deposition ,X-ray photoelectron spectroscopy ,chemistry ,business ,Silicon oxide - Abstract
We have researched low temperature silicon oxide (SiO2) with improved electrical properties and excellent film step-coverage. In-situ O2 plasma densification (DENSIFICATION) effect on SiO2 that has been deposited by PE-ALD at temperature (2 network defects by the oxygen radicals. Angle Resolved X-ray Photoelectron Spectroscopy (AR-XPS) analysis was carried out to observe the core-level binding energies shifts (chemical shifts) in the different SiO2 films. The characteristics of wet etch rate of high quality low temperature SiO2 demonstrated lower than high temperature LP-CVD SiO2 values. Compared to LP-CVD SiO2, PE-ALD SiO2 with DENSIFICATION showed excellent I-V characteristics with lower leakage current and similar to the thermal SiO2 carrier transport plot.
- Published
- 2013
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