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This paper presents systematic studies performed to investigate the properties of dielectric capping layers inserted in high-k metal gate stacks. Physical mechanisms involving such material systems are studied by using identical gate dielectric stacks of La inserted in HfO2 and are studied in both gate-first and gate-last integration. The studies reveal a strong dependence on the thermal budget that the gate stacks are subjected to in forming the capping layer induced dipoles that in turn influences the dipole related threshold voltage shifts and lowered gate leakage. By varying the position of the capping layers in the HfO2 gate dielectric, the threshold voltage and gate leakage are reduced by ~ 200mV and 1.5-2 orders of magnitude respectively in gate-last integration and ~580mV and 4 orders of magnitude respectively in gate-first integration.

This paper presents the optimization of HfO2 high-k gate dielectrics by utilizing cyclic depositions and anneals during atomic layer deposition (ALD). An order of magnitude reduction in gate leakage is obtained by tuning the anneal temperature, duration and sequence in the ALD. The films are also seen to have three to four times reduction in carbon content. These optimized films are moreover observed to be densified without compromising equivalent oxide thickness (EOT), carrier mobility and threshold voltage. Further electrical characterization supports that there is a suppression of trap assisted tunneling with the optimized ALD process by revealing a stronger temperature dependence on the annealed samples as opposed to the conventional ALD process.

We have previously shown that by varying the position of threshold voltage adjustment cap layers within the gate stack, as well as the oxidant used during processing, it is possible to tune the threshold voltage of n-FET devices, and to concurrently realize a scaling benefit by incorporating group IIA and group IIIB elements into gate dielectrics deposited by metalorganic atomic layer deposition. In this report we have focused on lanthanum oxide cap layers that provide band edge nFET work functions. We compare our previously reported results with ozone oxidation with newly developed processes using oxygen and water as oxidants that result in highly scaled devices with band edge work functions and acceptable leakage characteristics.

In this work, co-sputtered TaC (tantalum + carbon targets + argon) and reactive sputtered TaC (tantalum + methane + argon) were evaluated and compared for application as metal electrodes in high-K/metal gate stacks aimed at 22 nm and beyond technology nodes. The electrical properties of field effect transistors (FETs) were evaluated as a function of TaC deposition conditions and optimized to achieve Tinv scaling. Controlling the deposition conditions as well as the composition of the TaC films was found to be critical to achieve Tinv < 11 Aa.

This paper presents studies performed in engineering high-k metal gate stacks by using capping layers containing Group IIA and IIIB elements. Both high-k gate dielectric (HfO2) and capping materials, namely, the oxides of barium, lanthanum and yttrium are deposited by atomic layer deposition (ALD) to offer superior process control and flexibility. Position specific insertion of cap layers into the gate stack is studied and the device tradeoffs are highlighted. The magnitude of Vt shift is correlated to the electronegativity of the cap layer species and its relative position in the gate stack. For a given cap position, BaO provides the maximum Vt shift, followed by La2O3 and Y2O3 caps. Ozone based ALD processes are shown to adversely impact Tinv scaling due to the re-growth of the interface layer between the high-k and the silicon substrate. Significant improvements in Tinv scaling are obtained by migrating to a water based ALD process.

In this paper we will review some of our previous work on ALD deposited high-K dielectric stacks as well as present some of our more recent advances. We have shown that ALD can be used successfully to deposit high quality high-K gate dielectrics of Hf and Zr oxide. In addition, because of the inherent conformality of ALD processes, these dielectrics can be easily migrated to advanced device structures such as FINFETs. We have also been successful in developing ALD processes to deposit rare earth oxides (REOs), such as Y2O3 and La2O3. These processes are useful in creating layered dielectric structures where the REO functions as a threshold voltage adjustment layer. We use physical and electrical characterization of the films as deposited by ALD, including spectroscopic ellipsometry, corona oxide semiconductor charge measurement, TXRF, AES, angle resolved XPS, HRTEM, AFM, MEIS, and RBS, to provide information on the film growth mechanism and the primary parameters that influence the ALD growth of high-K oxides. We further correlate these findings with basic electrical results obtained from MOSFET and MOSCAP devices fabricated using our ALD processes to understand how process changes affect both the as-deposited films as well as the resulting devices.

The criterion for a suitable high-K dielectric/metal gate stack for replacing SiON/Poly-Si stacks in conventional CMOS devices are i) Equivalent oxide thickness (EOT) of {less than or equal to} 1.1 nm, ii) Electron and hole mobilities that are comparable to conventional stacks, and iii) Near Band-Edge (BE) threshold voltages for both nFET and pFET devices. Aggressive scaling and competitive mobilities have been demonstrated using HfO2/metal gate stacks [1] through optimization of interfacial layer composition, choice of suitable metal electrodes and deposition processes, and high thermal budgets that are compatible with conventional FET fabrication. A suitable NFET BE solution compatible with gate first process flow achieved by inserting capping layers containing gp. IIA (e.g., Mg) & gp. IIIB (e.g., La) elements into proven high mobility mid-gap HfO2/TiN gate stacks thereby moving the effective work function (EWF) to nFET BE [2,3]. On the pFET front, the challenge remains that elements with high bulk workfunction exhibit Vt instability as well as inherent scaling limitations after high temperature processing that is required in a gate first process flow.

This paper presents systematic studies performed to investigate the properties of dielectric capping layers inserted in high-k metal gate stacks. Physical mechanisms involving such material systems are studied by using identical gate dielectric stacks of La inserted in HfO2 and are studied in both gate-first and gate-last integration. The studies reveal a strong dependence on the thermal budget that the gate stacks are subjected to in forming the capping layer induced dipoles that in turn influences the dipole related threshold voltage shifts and lowered gate leakage. By varying the position of the capping layers in the HfO2 gate dielectric, the threshold voltage and gate leakage are reduced by ~ 200mV and 1.5-2 orders of magnitude respectively in gate-last integration and ~580mV and 4 orders of magnitude respectively in gate-first integration.

This paper will focus on the capability of a low-temperature cyclical deposition/etch (CDE) epitaxy process based on Si2H6 to fabricate SiCP films exhibiting very-high, electrically-active P and C concentrations with fast growth rates. This process will be characterized on blanket wafers first and optimized for raised source/drain applications in planar FDSOI technology featuring 20nm design rules. Low temperature drive-in anneal in combination with high phosphorus doping was employed leading to best resistivity values of 0.3 mΩ.cm for SiP and 0.6 mΩ.cm for SiC2%P. We will show that increasing the phosphorus concentration in the layers enables us to have the same transistor overlap after diffusion anneal for comparable resistivity with SiP films and improved carbon substitutionality. Best Ron values as low as 220Ω.μm will be reported, measured on 20nm gate length transistors in planar FDSOI technology with an optimized process.

Future generations of silicon based integrated circuit technology require carrier concentrations in excess of the equilibrium dopant concentrations. In-situ doping during the epitaxial growth is an attractive alternative to place dopants where needed with tunable concentrations and hyper-abruptness. In this work we study the incorporation of boron or boron and carbon co-doping into fully strained high percentage (60%) Silicon-Germanium. We will discuss the epitaxial growth and dopant incorporation, and its effects on strain compensation due to the dopant atoms. The main focus will be on defect generation in highly strained doped SiGe layers.

We have previously shown that by varying the position of threshold voltage adjustment cap layers within the gate stack, as well as the oxidant used during processing, it is possible to tune the threshold voltage of n-FET devices, and to concurrently realize a scaling benefit by incorporating group IIA and group IIIB elements into gate dielectrics deposited by metalorganic atomic layer deposition. In this report we have focused on lanthanum oxide cap layers that provide band edge nFET work functions. We compare our previously reported results with ozone oxidation with newly developed processes using oxygen and water as oxidants that result in highly scaled devices with band edge work functions and acceptable leakage characteristics.

This paper presents the optimization of HfO2 high-κ gate dielectrics by utilizing cyclic depositions and anneals during atomic layer deposition (ALD). An order of magnitude reduction in gate leakage is obtained by tuning the anneal temperature, duration and sequence in the ALD. The films are also seen to have three to four times reduction in carbon content. These optimized films are moreover observed to be densified without compromising equivalent oxide thickness (EOT), carrier mobility and threshold voltage. Further electrical characterization supports that there is a suppression of trap assisted tunneling with the optimized ALD process by revealing a stronger temperature dependence on the annealed samples as opposed to the conventional ALD process.

This paper presents studies performed in engineering high-k metal gate stacks by using capping layers containing Group IIA and IIIB elements. Both high-k gate dielectric (HfO2) and capping materials, namely, the oxides of barium, lanthanum and yttrium are deposited by atomic layer deposition (ALD) to offer superior process control and flexibility. Position specific insertion of cap layers into the gate stack is studied and the device tradeoffs are highlighted. The magnitude of Vt shift is correlated to the electronegativity of the cap layer species and its relative position in the gate stack. For a given cap position, BaO provides the maximum Vt shift, followed by La2O3 and Y2O3 caps. Ozone based ALD processes are shown to adversely impact Tinv scaling due to the re-growth of the interface layer between the high-k and the silicon substrate. Significant improvements in Tinv scaling are obtained by migrating to a water based ALD process.