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(1)A 2D tunneling model is developed to assess the tunneling reduction in cylindrical gate (CG) in nanowire (NW) MOSFETs with radius Rs, comparing with the planar double gate (PG-DG) transistor with Tsemi=2Rs and same dielectric thickness Tox. High-k gate dielectric is more effective to suppress the gate leakage in NW than in PG transistors, (2) the carrier quantization induced tunneling barrier reduction is larger in NW than in DG-PG transistors. The gate tunneling rate is finally determined by combining two effects of (1) and (2). Different results for Si, Ge, and InGaAs NWs are demonstrated, (3) comparing with PG transistor, the overdrive gate voltage in NW transistor can be reduced significantly. At the same time evolution of dielectric charge generation, the NW transistor lifetime can be greatly extended.

I. Two different traps (fast and slow) in HfO2 gate dielectric are identified. For the slow traps, the negative U (-U) property of trap is proposed and confirmed by the first principle calculation. Each trap can trap two electrons or two holes and lower the trap energy due to a large lattice relaxation. The observed experimental result of reduction in slow component of bias temperature instability (BTI) degradation with an increase in stress frequency can be simulated with excellent agreement, based on the concept of - U. A fast BTI component is also observed. The fast dynamic BTI degradation is increased with an increase in stress frequency. It is due to the existence of fast traps and can be simulated by the conventional trapping/de-trapping equations. The fast trap is a standard conventional trap. II. Mixing Ta and La into HfO2 to form HfTaO and HfLaO gate dielectric have been studied systematically. Comparing to the HfO2 gate dielectric, the HfTaO and HfLaO have the advantages of much higher crystallization temperature, much lower charge trapping as well as the BTI degradation, and increased channel mobility. In addition, variation of La concentration in HfLaO/TaN or HfLaO/HfN gate stack can effectively tune the metal work function continuously from mid gap to 4eV. Possible physical explanation for these interesting properties are discussed.