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In an integration scheme where the nFETs and pFETs of CMOS devices are silicided with different materials (Dual Silicides), rare-earth erbium (Er) and ytterbium (Yb) silicides are potential candidates for contacts to n-Si because of their lower Schottky barrier heights, as compared to more conventional nickel and cobalt silicides. [1-3] Although the lower Schottky barrier across the silicide/n-silicon interface results in reduced contact resistivity, the microstructure can exhibit defects and morphology issues [3-7] which affect device integrity and may contribute to contact resistance degradation. [8] In this study, we compared the material and integration properties of Er and Yb silicides with those of Ni (Pt-alloyed) silicide. Using four point probe, AFM, optical inspection and SEM, we compared the silicides using sheet resistance, surface morphology, defects density and ease of formation in narrow lines. We found that the silicide morphology is affected by several process parameters such as the type of metal deposition process (sputtering vs. evaporated) and the anneal formation temperature. The silicides were also tested for their ability to withstand aggressive processing after their formation. The processes tested included exposure to PECVD plasma, contact hole reactive ion etching and forming-gas annealing. The rare-earth and Ni(Pt) silicides showed similar stability upon processing. Lastly, we quantified the residual metal remaining on dielectric surfaces after silicide processing. Overall, Er silicide showed better performance than Yb silicide. By optimizing various elements of the silicidation process, higher quality silicide films can be achieved for evaluation as suitable nFet contacts.

We study the impact of improved dopant activation in a BiCMOS SiGe technology, using laser annealing to improve activation, and a low temperature contact module to avoid de-activation. We present the results of simple DC test structure measurements and high frequency bipolar transistor measurements. Improved activation significantly reduces sheet resistance, particularly for polysilicon layers. Likewise, reductions in the bipolar device resistance parasitics cause an improvement in maximum power gain frequency (fMAX).

In an integration scheme where the nFETs and pFETs of CMOS devices are silicided with different materials (Dual Silicides), rare-earth erbium (Er) and ytterbium (Yb) silicides are potential candidates for contacts to n-Si because of their lower Schottky barrier heights, as compared to more conventional nickel and cobalt silicides. [1-3] Although the lower Schottky barrier across the silicide/n-silicon interface results in reduced contact resistivity, the microstructure can exhibit defects and morphology issues [3-7] which affect device integrity and may contribute to contact resistance degradation. [8] In this study, we compared the material and integration properties of Er and Yb silicides with those of Ni (Pt-alloyed) silicide. Using four point probe, AFM, optical inspection and SEM, we compared the silicides using sheet resistance, surface morphology, defects density and ease of formation in narrow lines. We found that the silicide morphology is affected by several process parameters such as the type of metal deposition process (sputtering vs. evaporated) and the anneal formation temperature. The silicides were also tested for their ability to withstand aggressive processing after their formation. The processes tested included exposure to PECVD plasma, contact hole reactive ion etching and forming-gas annealing. The rare-earth and Ni(Pt) silicides showed similar stability upon processing. Lastly, we quantified the residual metal remaining on dielectric surfaces after silicide processing. Overall, Er silicide showed better performance than Yb silicide. By optimizing various elements of the silicidation process, higher quality silicide films can be achieved for evaluation as suitable nFet contacts.