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An oblique angle electron beam co-deposition technique was used to fabricate nanostructured Sn based thin films: Sn, Cu-Sn and Cu-Sn-C. The morphological and structural properties of the films were observed via scanning electron microscopy (SEM) and thin film X-ray diffraction methods (XRD). The cyclic voltammetry (CV) and the galvanostatic test results demonstrated that the addition of Cu with or without C affected the electrochemical performance of the thin film positively since Cu and C improved both the mechanical and the electrical properties of the nanostructured Sn thin film electrode. The high cycleability and the capacity retention were achieved when the nanostructured Cu-Sn-C thin film was used as an anode material since C increased the mechanical tolerance of the thin film to the volume expansion due to its grain refiner effect, and Cu not only improved the electrical conductivity and the adhesion of the film to substrate but also the mechanical tolerance of the film with its ductile property.