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Your search keyword '"Detavernier, Christophe"' showing total 15 results
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15 results on '"Detavernier, Christophe"'

2. High-k Dielectrics and Metal Gates for Future Generation Memory Devices

Author

Kittl, Jorge A., primary, Opsomer, Karl, additional, Popovici, M, additional, Menou, N., additional, Kaczer, Ben, additional, Wang, X. P., additional, Adelmann, C., additional, Pawlak, M. A., additional, Tomida, K., additional, Rothschild, Aude, additional, Govoreanu, Bogdan, additional, Degraeve, R., additional, Schaekers, M., additional, Zahid, M, additional, Delabie, A., additional, Meersschaut, J., additional, Polspoel, W., additional, Clima, Sergiu, additional, Pourtois, Geoffrey, additional, Knaepen, W., additional, Detavernier, Christophe, additional, Afanas'ev, Valery, additional, Blomberg, T., additional, Pierreux, D., additional, Swerts, J., additional, Fischer, P., additional, Maes, J. W., additional, Manger, D., additional, Vandervorst, Wilfried, additional, Conrad, T., additional, Franquet, A., additional, Favia, P., additional, Bender, Hugo, additional, Brijs, B., additional, Van Elshocht, S., additional, Jurczak, Malgorzata, additional, Van Houdt, J., additional, and Wouters, Dirk J., additional

Published
2019
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7. VO2, a Metal-Insulator Transition Material for Nanoelectronic Applications

Author

Martens, Koen M., primary, Radu, Iuliana P., additional, Rampelberg, Geert, additional, Verbruggen, Jeroen, additional, Cosemans, Stefan, additional, Mertens, Sofie, additional, Shi, Xiaoping, additional, Schaekers, Marc, additional, Huyghebaert, Cedric, additional, De-Gendt, S., additional, Detavernier, Christophe, additional, Heyns, Marc, additional, and Kittl, Jorge A., additional

Published
2012
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9. (Invited) Introducing Lanthanide Aluminates as Dielectrics for Nonvolatile Memory Applications: A Material Scientist's View

Author

Adelmann, Christoph, primary, Swerts, Johan, additional, Richard, Olivier, additional, Conard, Thierry, additional, Popovici, Mihaela, additional, Afanas'ev, Valeri V., additional, Breuil, Laurent, additional, Cacciato, Antonio, additional, Opsomer, Karl, additional, Brijs, Bert, additional, Tielens, Hilde, additional, Pourtois, Geoffrey, additional, Bender, Hugo, additional, Detavernier, Christophe, additional, Jurczak, Malgorzata, additional, Van Elshocht, S., additional, and Kittl, Jorge A., additional

Published
2010
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10. ALD of Vanadium Oxide

Author

Musschoot, Jan, primary, Deduytsche, Davy, additional, Van Meirhaeghe, Roland L., additional, and Detavernier, Christophe, additional

Published
2009
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13. High-k Dielectrics and Metal Gates for Future Generation Memory Devices

Author

Kittl, Jorge A., Opsomer, Karl, Popovici, M, Kaczer, Ben, Rothschild, Aude, Govoreanu, Bogdan, Zahid, M, Clima, Sergiu, Pourtois, Geoffrey, Detavernier, Christophe, Afanas, Valery, Vandervorst, Wilfried, Bender, Hugo, Elshocht, Van, Jurczak, Malgorzata, Houdt, Van, and Wouters, Dirk J.

Abstract

The requirements and development of high-k dielectric films for application in storage cells of future generation flash and Dynamic Random Access Memory (DRAM) devices are reviewed. Dielectrics with k-value in the 9-30 range are studied as insulators between charge storage layers and control gates in flash devices. For this application, large band gaps (> 6 eV) and band offsets are required, as well as low trap densities. Materials studied include aluminates and scandates. For DRAM metal-insulator-metal (MIM) capacitors, aggressive scaling of the equivalent oxide thickness (with targets down to 0.3 nm) drives the research towards dielectrics with k-values > 50. Due to the high aspect ratio of MIMCap structures, highly conformal deposition techniques are needed, triggering a substantial effort to develop Atomic Layer Deposition (ALD) processes for the deposition of metal gates and high-k dielectrics. Materials studied include Sr and Ba-based perovskites, with SrTiO3 as one of the most promising candidates, as well as tantalates, titanates and niobates.

Published
2009

14. Point-Defect Generation in Ni-, Pd-, and Pt-Germanided Schottky Barriers on N-Type Germanium Substrates

Author

Simoen, Eddy R., Opsomer, Karl, Maex, Karen, Detavernier, Christophe, Van, Roland, Forment, Stefaan, and Clauws, Paul

Abstract

In this paper, the creation of point defects in n-type germanium by Ni-, Pd or Pt-germanidation is investigated by means of Deep Level Transient Spectroscopy (DLTS). The germanidation is achieved by a Rapid Thermal Annealing (RTA) step between 300 and 500oC of a 30 nm sputtered metal layer. Contrasting behaviour is found between Ni, on the one hand, and Pd and Pt, on the other: in-diffusion of nickel is found starting from 400oC, while in the second case, vacancy-related deep levels have been observed at the lower RTA temperatures. Evidence will be provided that these defects are most likely formed during the sputtering of the heavy metal atoms, introducing radiation damage in the Ge substrate. Finally, the impact of these deep levels on the current-voltage (I-V) characteristics of the obtained metal-germanide Schottky barriers will be discussed.

Published
2006

15. The Deposition of Ru and RuO2Films for DRAM Electrode

Author

Schaekers, Marc, Capon, Boris, Detavernier, Christophe, and Blasco, Nicolas

Abstract

Ru and RuO2 films were deposited from Torus, a blend of RuO4. At low hydrogen dose RuO2 films were deposited at 200ºC. With sufficient dosing of hydrogen, Ru films were obtained; either a high enough hydrogen pressure or plasma was used. Process temperatures between 100ºC and 250ºC were explored. At 100ºC the process behaves like ALD, while at 200ºC thermal decomposition is dominating. Above 200ºC the decomposition of RuO4 increases rapidly. The deposited films are smooth and with low impurities.

Published
2010
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