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We present the results of design and optimization of high-voltage devices (170V) in a novel 0.35um BCD process. This process is based on a 0.35um BCD process. Process parameter optimization and device structures have been designed after detailed TCAD simulation and experimental device characterization. Several approaches such as adjusting field plate and optimizing LDD structure have been tried to improve breakdown voltage of the devices. By analyzing experiment results from several process splits, designs of 170V high voltage devices have been finalized. Good performance and very competitive specific on-resistances of devices after optimizition have been achieved.

The development of MEMS/IC design environment based on SMIC 0.13um CMOS process was reported. This effort includes the development of PDK (Process Design Kit) by integrating MEMS inductor devices. The MEMS inductors can be used to design high performance RF circuit with standard CMOS devices. A low noise amplifier (LNA) circuit was designed with the PDK. The results showed that the MEMS inductors can improve the performance of the LNA circuit and the PDK can be used for Radio Frequency Integrated Circuits (RFIC) design. This work has laid a foundation for our future development of a design environment for MEMS/IC applications.