Search

The defect inspection results for advanced technology nodes have extremely high defect counts frequently. Therefore, the defect review Pareto get high false rate due to the SEM non-visual defects, nuisance defects, or dummy fill patterns by traditional review sampling methodology. An integrated smart review sampling methodology is proposed to resolve the high false rate issue and dig out the DOIs and POIs effectively in huge big inspection results with aid of design data base.

Core bump defect is yield killer in terms of causing blocked etch during poly-Si hard mask etching in the spacer-type self-aligned double patterning (SADP) manufacture process flow. By clarifying the characteristics and formation mechanism of the core bump defect occurred on the top of the organic mandrel post room temperature oxide deposition, several strategies, e.g., electron beam illumination, high/low pressure baking and pulsed plasma etch, were explored. Afterward an effective suppression of the core bump adder was developed, resulting in the sorting yield ramping up by 10% at least.

The inspection sensitivities and capture rate capabilities of high resolution e-beam inspection system with extracting and retarding mode are evaluated. E-beam with retarding mode inspection demonstrates better performance and reflects the wafer sort yield loss in contact failure items directly. After the contact module process optimization, the yield was improved almost two times above.

High resolution e-beam review system with critical point inspection (CPI) function is implemented to verify the systematic defects in both array and periphery area of NOR Flash products. CPI inspection can help us to intercept with unobvious systematic defects and find the process variation to save the cost of yield loss from time to time, and it is important for debugging the systematic defects in irregularly periphery circuits.