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Multi-gate devices seem to be the best candidates for the ultimate integration of ICs on silicon. The comparison of the electrical properties on these innovative architectures with nanoscale single-gate and bulk transistors is shown. The impact of alternative channel materials, using strained Si, Ge or III-V layers on insulator, on the performance and physical mechanisms in multi-gate MOSFETs is addressed. The interest of multi-gate emerging and beyond-CMOS nanodevices for long term applications, based on nanowires or small slope switch structure for ultra power applications, is presented. The possible 3D integration of multi-channels and stacked nanowires is also investigated for the end of the roadmap. Finally, the flexibility of multi-gate SOI structures for boosting the scalability and performance of DRAM, SRAM and flash memories is outlined.

Silicon On Insulator (SOI)-based devices seem to be the best candidates for the ultimate integration of ICs on silicon. The performance and physical mechanisms are addressed in single- and multi-gate thin film Si, Ge and III-V MOSFETs. The impact of tensile or compressive uniaxial and biaxial strains in the channel, of high k materials and metal gates as well as metallic Schottky source-drain architectures are discussed. The interest of SOI-based emerging and beyond-CMOS nanodevices for long term applications, based on nanowires, carbon electronics or small slope switch structures is presented. Finally, the possible 3D integration of multi-channels and stacked nanowires is also shown.