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Start Over Author "Balasubramanian S. Haran" Journal ecs transactions
2 results on '"Balasubramanian S. Haran"'

2. Ultra-Thin Body and BOX (UTBB) Device for Aggressive Scaling of CMOS Technology

Author

Shom Ponoth, Arvind Kumar, J. Kuss, Pranita Kulkarni, Frederic Boeuf, Ali Khakifirooz, Balasubramanian S. Haran, Effendi Leobandung, Kangguo Cheng, Qing Liu, Mukesh Khare, Maud Vinet, Scott Luning, Masami Hane, T. Yamamoto, Nicolas Loubet, Prasanna Khare, Walter Kleemeier, Terence B. Hook, Frederic Monsieur, Mariko Takayanagi, Thomas Skotnicki, Stephane Monfray, Huiming Bu, Ron Sampson, Kazunari Ishimaru, Sanjay Mehta, Jin Cai, Bruce B. Doris, and Atsushi Yagishita

Subjects
Ultra thin body, CMOS, Computer science, business.industry, Modulation, Electronic engineering, Optoelectronics, Short-channel effect, Static random-access memory, business, Scaling, Polarity (mutual inductance), Ground plane
Abstract

We report fully-depleted UTBB devices with a gate length (LG) of 25nm and BOX thickness (TBOX) at 25nm, fabricated with a 22nm technology ground rule, featuring conventional gate first high-K/metal and raised source/drain (RSD) process. Competitive drive currents are achieved. Effective Vt modulation is observed with back bias (Vbb) and different ground plane (GP) polarity. Excellent local Vt variation is demonstrated. A functional UTBB 0.108μm2 6-T SRAM is reported with Vdd down to 0.4V. We also present simulation studies that suggest UTBB device has superior scalability compared with thick BOX ETSOI device, thanks to better short channel effect (SCE) control.

Published
2011

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