26 results on '"Hobart, Karl D."'
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2. Impact of Anode Doping on Avalanche in Vertical GaN Pin Diodes with Hybrid Edge Termination Design
3. Using Data Science and Machine Learning to Predict the Failure Rate of Pin Diodes
4. (Invited) Materials Integration, Interlayers, and Interactions for Thermal Management of Wide Bandgap Device Structures
5. Using Wafer Scale Optical Profilometry to Estimate the Failure Rate of Vertical Pin GaN Diodes
6. (Invited) Understanding the Electroluminescence Signature of High-Voltage Vertical GaN Pin Diodes with Different Edge Termination Designs
7. (Invited) Developments in Vertical GaN p-n Junction Structures Via p-Type Ion Implantation
8. (Invited) Vertical Gallium Nitride PN Diodes for Grid Resiliency and Medium-Voltage Power Electronics
9. Nanocrystalline Diamond Lateral Overgrowth for High Thermal Conductivity Contact to Unseeded Diamond Surface.
10. (Electronics and Photonics Division Poster Award Winner) Operation up to 225°C of NiO/β-(Al0.21Ga0.79)2O3/Ga2O3 Heterojunction Lateral Rectifiers.
11. (Invited) Ion Implantation and Activation of n- and p-Type Dopants in GaN
12. (Invited) Integration of Diamond with GaN for Thermal Management in High Power Applications
13. (Invited) Thick, Low-Doped Homoepitaxial Ga2O3 for Power Electronics Applications
14. (Invited) Vertical GaN Devices Enabled By Selective Area P-Type Doping
15. ALD TiN Schottky Gates for Improved Electrical and Thermal Stability in III-N Devices
16. Mechanical Exfoliation of Large Area (100) β-Ga2O3 Onto Arbitrary Substrates for High Power Devices
17. (Invited) Recent Progress in Medium-Voltage Vertical GaN Power Devices.
18. Towards Controlled Transfer of (001) β-Ga2O3 to (0001) 4H-SiC Substrates.
19. (Invited) GaN Photoconductive Semiconductor Switches for Efficient High-Voltage Power Conversion Applications.
20. (Invited) Improved Vertical GaN Diodes with Mg Ion Implanted Junction Termination Extension
21. (Invited) Displacement Damage and Single Event Effects in AlGaN/GaN HEMTs
22. Characterization of Lift Off Resist during Thermal Compression Wafer Bonding Based on Polydimethylglutarimide (PMGI)
23. (Invited) Vertical GaN p-i-n Diodes Formed by Mg Ion Implantation
24. Advances in Diamond Integration for Thermal Management in GaN Power HEMTs
25. Wide Bandgap Semiconductor Research Interests at Navy Laboratories
26. (Invited) NiO/ β-(AlxGa1-x)2O3 /Ga2O3 Heterojunction Lateral Rectifiers with Reverse Breakdown Voltage > 7kV.
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