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Your search keyword '"Thomas S. Kanarsky"' showing total 2 results
Start Over Author "Thomas S. Kanarsky" Journal digest of technical papers. 2005 symposium on vlsi technology, 2005.
2 results on '"Thomas S. Kanarsky"'

1. Investigation of CMOS devices with embedded sige source/drain on hybrid orientation substrates

Author

Jinghong Li, Henry K. Utomo, Chun-Yung Sung, Andres Bryant, Qiqing Ouyang, Min Yang, Horatio S. Wildman, N. Klymko, David M. Fried, Massimo V. Fischetti, Gregory Costrini, Siddhartha Panda, Thomas S. Kanarsky, John A. Ott, Judson R. Holt, Huajie Chen, Meikei Ieong, and Nivo Rovedo

Subjects
Materials science, Orientation (computer vision), business.industry, Silicon on insulator, Ring oscillator, Epitaxy, Silicon-germanium, chemistry.chemical_compound, chemistry, CMOS, Etching (microfabrication), MOSFET, Electronic engineering, Optoelectronics, business
Abstract

CMOS devices with embedded SiGe source/drain for pFETs and tensile stressed liner for nFETs have been demonstrated for the first time on hybrid orientation substrates. Ring oscillators have also been fabricated. Significant performance improvement is observed in hybrid orientation substrates compared to (100) control substrates with embedded SiGe.

Published
2005
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2. Dual stress liner enhancement in hybrid orientation technology

Author

L. Economikos, Andres Bryant, D. Degraw, Munir D. Naeem, Chun-Yung Sung, Woo-Hyeong Lee, L. Black, Christopher D. Sheraw, Meikei Ieong, Yujun Li, Siddhartha Panda, Shih-Fen Huang, Massimo V. Fischetti, Judson R. Holt, Victor Chan, Thomas S. Kanarsky, Dureseti Chidambarrao, Renee T. Mo, Gregory Costrini, David M. Fried, J. Groschopf, Mukesh Khare, Xinhui Wang, Scott Luning, A. Bonnoit, D. Brown, A. Kapur, Min Yang, Paul D. Agnello, and X. Chen

Subjects
Electron mobility, Materials science, Silicon, business.industry, Silicon on insulator, chemistry.chemical_element, Ring oscillator, Nitride, chemistry, Etching (microfabrication), Saturation current, MOSFET, Electronic engineering, Optoelectronics, business
Abstract

Hybrid orientation technology (HOT) has been successfully integrated with a dual stress liner (DSL) process to demonstrate outstanding PFET device characteristics in epitaxially grown [110] bulk silicon. Stress induced by the nitride MOL liners results in mobility enhancement that depends on the designed orientation of the gate, in agreement with theory. Compressive stressed liner films are utilized to increase HOT PFET saturation current to 635 uA/um I/sub DSat/ at 100 nA/um I/sub OFF/ for V/sub DD/=1.0 V at a 45 nm gate length. The AC performance of a HOT ring oscillator shows 14% benefit from [110] silicon and an additional 8% benefit due to the compressive MOL film.

Published
2005
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