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Start Over Author "Bercu, Nicolas" Journal diffusion and defect data part b: solid state phenomena
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1. Coupled Non-Destructive Methods, Kelvin Force Probe Microscopy and µ-Raman to Characterize Doping in 4H-SiC Power Devices

Author

Vuillermet, Enora, Wu, Kuan Ting, Sedilot, Anael, Deturche, Regis, Bercu, Nicolas, Usureau, Elise, Beal, Jérémie, and Lazar, Mihai

Abstract

Investigation of the doped areas in 4H-SiC power devices has been done by non-destructive characterization methods. It consists of local surface potential measurements by Kelvin Probe Force Microscopy (KPFM) coupled with scanning electron microscopy (SEM) and µ-Raman spectroscopy. Near-field mappings of the devices’ surface have been realized, allowing us to discern the differently doped areas.

Published
2024
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