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Van der Waals layered transition metal dichalcogenides (TMDCs), as atomically flat two-dimensional materials, have been studied extensively in both fundamental science and application fields in recent years. The reduced-dimensional properties of TMDCs not only provide a route for the fabricating of efficient field effect transistors and optoelectronic devices but also suggest the possibility of the devices that utilize quantum coherency. In this work, we characterize the electron transport properties of ReS2, one of the TMDCs, at both room temperature and low temperature. Of particular note, we measured strong quantum conductance oscillations as a function of the gate voltages and source-drain voltages at reduced temperature, which is evidence of quantum coherent transport. This work unambiguously establishes ReS2 as a promising candidate for future quantum materials.

Many experiments have been conducted so far to control the growth mode in heterostructures, but success has only been restricted to strain-controlled growth systems. In this study, using the shadow mask deposition technique, we have changed the growth mode in the Fe/W heterostructures from the layer-plus-island growth mode to island-plus-layer growth mode. From this, we have ignited the competing growth between forming the islands and wetting the first layer, and have directly visualized the island-plus-layer growth by controlling the annealing temperature of the system. This unconventional growth mode may play an important role in studying the hidden boundaries of hetero-interfaces.