1. Effect of ozone pulse time on the properties of the thin-film amorphous-silicon solar cell with atomic-layer-deposited V2O5-x films as the hole-transporting layer
- Author
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Se-Hun Kwon, Jong-Joo Rha, Woon Ik Park, Jung-Dae Kwon, Young Joo Lee, and Sung-Do Lee
- Subjects
010302 applied physics ,Amorphous silicon ,Ozone ,Materials science ,Inorganic chemistry ,Energy conversion efficiency ,Analytical chemistry ,General Physics and Astronomy ,02 engineering and technology ,021001 nanoscience & nanotechnology ,01 natural sciences ,chemistry.chemical_compound ,Atomic layer deposition ,chemistry ,X-ray photoelectron spectroscopy ,0103 physical sciences ,General Materials Science ,Thin film ,0210 nano-technology ,Layer (electronics) ,Ultraviolet photoelectron spectroscopy - Abstract
Vanadium oxide (V 2 O 5-x ) thin films with a thickness of about 4 nm were prepared by atomic layer deposition (ALD) to be used as a hole-transporting layer in an amorphous silicon solar cell. The ALD growth characteristics (growth rate, crystallinity, and surface morphology) of the V 2 O 5-x films were investigated while exposed to different pulse times of ozone (O 3 ), which was used as an oxidant. The effect of the different ozone pulse times, used in the V 2 O 5 layer, on the device performance was also investigated. At the ozone pulse time of 1 s, the maximum value of power conversion efficiency (PCE), i.e., 5.35%, was achieved, whereas at the ozone pulse time of 5 s, the PCE was 4.18%. Ultraviolet photoelectron spectroscopy (UPS) and X-ray photoelectron spectroscopy (XPS) analyses confirmed that increasing the proportion of crystalline phase in the V 2 O 4 films with lower work function of V 2 O 5 resulted in decreased open-circuit voltage and conversion efficiency as the ozone pulse time increased.
- Published
- 2016
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