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Three-dimensional SiOxnanostructures with various shapes have been prepared by chemical vapor deposition. The sunflower-like SiOxnanostructures provide a chance to probe the growth process. A typical Ga-assisted vapor–liquid–solid (VLS) model is responsible for the incipient SiOxnanostructures, while the growth of their branches is governed by a SiOxself-catalysis mechanism. Elemental analysis unveils the initial stage and evolution of SiOxnanostructure formation. The optical properties of SiOxnanostructures are also investigated. [ABSTRACT FROM AUTHOR]

In this paper, two types of hybrid semiconductors made up of silicon nanowires and ZnO nanostructures, namely Si/ZnO core–shell nanowire arrays and ZnO quantum dots (QDs)-decorated Si nanowire arrays, have been prepared by combining metal-assisted wet-chemical etching and metal–organic chemical vapor deposition (MOCVD). We demonstrate that ZnO QDs and thin ZnO layers can be grown on Si nanowires in a controlled manner by varying growth parameters including working pressure and growth time. Meanwhile, porous silicon and porous Si/ZnO nanowire arrays have also been fabricated. The morphology and optical properties of both hybrid nanostructures have been carefully investigated for their potential applications in nanowire optoelectronics. A quantum confinement effect in ZnO QDs was confirmed by the blue-shifted photoluminescence. Porous Si/ZnO core–shell nanowires display a very broad emission band throughout the entire visible light range. [ABSTRACT FROM AUTHOR]

Single-crystalline ultrathin nanorods of CeO2with uniform diameters of ca.1.5 nm have been synthesized viaan oriented attachment process based on a facile solution-based approach. [ABSTRACT FROM AUTHOR]