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The structure of manganese-implanted (dose 2 × 1016 cm−2) n-type and p-type silicon, ferromagnetic at room temperature, has been studied. During implantation, an amorphized layer is formed in the silicon wafer. Subsequent vacuum annealing improves the structural quality of the implanted material and leads to the formation of a vacancy solid solution of manganese in silicon. A difference in the degree of structural quality of silicon implanted by different impurities has been experimentally established.

Microdefects in undoped and zinc-doped GaP single crystals grown by the liquid-encapsulation Czochralski method have been studied by X-ray diffuse scattering. In undoped GaP single crystals, deviation from stoichiometry increases from the beginning to the end of an ingot. The ingot end is characterized by enhanced precipitation of excess gallium with formation of platelike microdefects. With an increase in their size, stress relaxation around microdefects begins to manifest itself. Doping with zinc leads to a significant change in the microdefect formation pattern.

A complex investigation into the structural perfection of the Si/SiGe superlattices grown by molecular-beam epitaxy at different temperatures of the Si substrate has been carried out by high-resolution X-ray diffraction analysis, secondary ion mass spectrometry (SIMS), and transmission electron microscopy (TEM). It is demonstrated that the combination of these methods makes it possible to describe in sufficient detail the distributions of the strains and Ge concentrations in the elastically strained superlattices and also to evaluate the sharpness of the layer interfaces. It is shown that the densitometry of electron microscope images of the superlattice cross-sections permits characterization of the relative sharpness of the layer interfaces and a qualitative representation of the Ge distribution throughout the thickness of the SiGe layers.

The state of manganese impurity in implanted silicon at implantation doses of up to 5 × 1016 cm−2 has been investigated by X-ray diffraction and transmission electron microscopy. It is established that, after short-term vacuum annealing at 850°C, most of the implanted manganese impurities are in microinclusions up to 20 nm in size formed by a tetragonal silicide phase of the Mn15Si26 type.