1. Molecular Beam Epitaxy of a 2D Material Nearly Lattice Matched to a 3D Substrate: NiTe2 on GaAs
- Author
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Sławomir Kret, Bartłomiej Seredyński, Marta Gryglas-Borysiewicz, Mateusz Tokarczyk, Zuzanna Ogorzałek, Janusz Sadowski, Wiktoria Zajkowska, Rafał Bożek, Wojciech Pacuski, and Jan Suffczyński
- Subjects
Condensed Matter::Materials Science ,Condensed Matter - Materials Science ,Lattice (module) ,Materials science ,Condensed matter physics ,Materials Science (cond-mat.mtrl-sci) ,FOS: Physical sciences ,Substrate (chemistry) ,General Materials Science ,General Chemistry ,Condensed Matter Physics ,Molecular beam epitaxy - Abstract
The lattice mismatch between interesting 2D materials and commonly available 3D substrates is one of the obstacles in the epitaxial growth of monolithic 2D/3D heterostructures, but a number of 2D materials have not yet been considered for epitaxy. Here we present the first molecular beam epitaxy growth of NiTe$_{2}$ 2D transition metal dichalcogenide. Importantly, the growth is realized on a nearly lattice matched GaAs(111)B substrate. Structural properties of the grown layers are investigated by electron diffraction, X-ray diffraction, and scanning tunnelling microscopy. Surface coverage and atomic scale order is evidenced by images obtained with atomic force, scanning electron, and transmission electron microscopy. Basic transport properties were measured confirming that NiTe$_{2}$ layers are metallic, with the Hall concentration of $10^{20}$cm$^{-3}$ to $10^{23}$cm$^{-3}$, depending on the growth conditions.
- Published
- 2021