1. Dispersion corrected elastic, electronic and thermoelectric properties of Bi2Se3.
- Author
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Paliwal, Uttam, Kumar, Jitendra, Tanwar, Pradeep, and Joshi, K.B.
- Subjects
- *
THERMOELECTRIC materials , *POISSON'S ratio , *BULK modulus , *MODULUS of rigidity , *YOUNG'S modulus , *THERMOELECTRICITY - Abstract
[Display omitted] • The elastic, electronic and thermoelectric properties of Bi 2 Se 3 are deduced using the first-principles PW-PP method. The PBE-D3 type dispersion corrections are included. • The bandgap 0.21 eV obtained using dispersion corrections is very close to the experimental data 0.22 eV. • The thermoelectric figure of merit zT = 0.02 found at 300 K using PBE-D3 is in very good agreement with the experimental values 0.01 and 0.09. It is found to decrease with increasing in temperature. • The power factor at 300 K is 93.4 × 10−5 W.m−1.K−2 is in excellent agreement with the experimental values 100 × 10−5, and 95 × 10−5 W.m−1.K−2.It is found to increase linearly with temperature. • Improvement in agreement of all calculated properties using PBE-D3 type dispersion correction with the experimental data corroborates that the PBE-D3 captures interlayer vdW interaction adequately in Bi 2 Se 3. The dispersion corrected elastic, electronic and thermoelectric properties of Bi 2 Se 3 are studied using the density functional theory deploying the Quantum ESPERSSO package. The ground state is achieved using the PBE exchange and correlation functional. PBE-D3 type dispersion correction is applied to capture the van der Waal interaction between the quintuple layers in Bi 2 Se 3. The computed lattice constants considering the dispersion correction are in excellent agreement with the experimental data. The elastic constants namely the bulk modulus, shear modulus, Young's modulus and Poisson ratio are evaluated. Effect of dispersion correction is observed in the elastic constants. The compression and shear anisotropy studies indicate that Bi 2 Se 3 is more anisotropic against shearing stress than against compression. The direct bandgap of 0.47 eV is obtained using the PBE functional which reduces to 0.21 eV when PBE-D3 dispersion correction is applied. The dispersion corrected direct bandgap is very close to the experimental value 0.22 eV. The total and projected density of states are computed and analyzed in terms of state contributions. The Bader charge analysis shows that Bi-Se2 bond is more ionic than the Bi-Se1 bond. Among the thermoelectric properties, the computed power factor and figure of merit zT , are in excellent agreement with the experimental data. The temperature dependent study shows that the figure of merit decreases while the power factor increases linearly. [ABSTRACT FROM AUTHOR]
- Published
- 2024
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