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Megabar pressures are of crucial importance for cutting-edge studies of condensed matter physics and geophysics. With the development of diamond anvil cell (DAC), laboratory studies of high pressure have entered the megabar era for decades. However, it is still challenging to implement in situ magnetic sensing under ultrahigh pressures. In this work, we demonstrate optically detected magnetic resonance and coherent quantum control of diamond nitrogen-vacancy (NV) center, a promising quantum sensor inside the DAC, up to 1.4 Mbar. The pressure dependence of optical and spin properties of NV centers in diamond are quantified, and the evolution of an external magnetic field has been successfully tracked at about 80 GPa. These results shed new light on our understanding of diamond NV centers and pave the way for quantum sensing under extreme conditions.

We investigate the synergism effect of total ionizing dose (TID) on single-event burnout (SEB) for commercial enhancement-mode AlGaN/GaN high-electron mobility transistors. Our experimental results show that the slight degradation of devices caused by gamma rays can affect the stability of the devices during the impact of high energy particles. During heavy ion irradiation, the safe working values of drain voltage are significantly reduced for devices which have already been irradiated by 60 Co gamma rays before. This could be attributed to more charges trapped caused by 60 Co gamma rays, which make GaN devices more vulnerable to SEB. Moreover, the electrical parameters of GaN devices after 60 Co gamma and heavy-ion irradiations are presented, such as the output characteristic curve, effective threshold voltages, and leakage current of drain. These results demonstrate that the synergistic effect of TID on SEB for GaN power devices does in fact exist.

We study the effect of the initial-state energy variance to the short-time behavior of the Loschmidt echo (LE) in a purely dephasing model. We find that the short-time LE behaves as a Gaussian function with the width determined by the initial-state energy variance of the interaction Hamiltonian, while it is a quartic decaying function with the width determined by the initial-state energy variance of the commutator between the interaction Hamiltonian and the environmental Hamiltonian when the initial state is an eigenstate of the interaction Hamiltonian. Furthermore, the Gaussian envelope in the temporal evolution of LE in strong coupling regime is determined by the inband variance. We will also verify the above conclusion in the XY spin model (as environment).

The diamond anvil cell-based high-pressure technique is a unique tool for creating new states of matter and for understanding the physics underlying some exotic phenomena. In situ sensing of spin and charge properties under high pressure is crucially important but remains technically challenging. While the nitrogen-vacancy (NV) center in diamond is a promising quantum sensor under extreme conditions, its spin dynamics and the quantum control of its spin states under high pressure remain elusive. In this study, we demonstrate coherent control, spin relaxation, and spin dephasing measurements for ensemble NV centers up to 32.8 GPa. With this in situ quantum sensor, we investigate the pressure-induced magnetic phase transition of a micron-size permanent magnet Nd 2 Fe 14B sample in a diamond anvil cell, with a spatial resolution of ∼2 μm, and sensitivity of ∼20 μT/Hz 1/2. This scheme could be generalized to measure other parameters such as temperature, pressure and their gradients under extreme conditions. This will be beneficial for frontier research of condensed matter physics and geophysics.

The synergism effect of total ionizing dose (TID) on a single event transient (SET) in a bipolar comparator is investigated. Experimental results show that the shapes of the SET are considerably influenced by the TID accumulated in low dose rates. The variation tendency of SET shapes can be accurately simulated by temperature switching irradiation. The mechanism of this synergism effect is also analyzed in brief via the operating schematic of a comparator. After the accumulation of 100 krad(Si), the lower tendency of negative SET can be attributed to the degeneration of beta. The change tendency of a positive SET, either lower or higher, is dependent on the load condition that limits the output range of the comparator.

The electron phonon relaxation time as functions of pulse width and fluence of femtosecond laser is studied based on the two-temperature model. The two-temperature model is solved using a finite difference method for copper target. The temperature distribution of the electron and the lattice along with space and time for a certain laser fluence is presented. The time-dependence of lattice and electron temperature of the surface for different pulse width and different laser fluence are also performed, respectively. Moreover, the variation of heat-affected zone per pulse with laser fluence is obtained. The satisfactory agreement between our numerical results and experimental data indicates that the electron phonon relaxation time is reasonably accurate with the influences of pulse width and fluence of femtosecond laser.

We numerical simulate the propagation behaviour and people distribution trait of epidemic spreading in mobile individuals by using cellular automaton method. The simulation results show that there exists a critical value of infected rate fluctuating amplitude, above which the epidemic can spread in whole population. Moreover, with the value of infected rate fluctuating amplitude increasing, the spatial distribution of infected population exhibits the spontaneous formation of irregular spiral waves and convergence phenomena, at the same time, the density of different populations will oscillate automatically with time. What is more, the traits of dynamic grow clearly and stably when the time and the value of infected rate fluctuating amplitude increasing. It is also found that the maximal proportion of infected individuals is independent of the value of fluctuating amplitude rate, but increases linearly with the population density.

The dynamics expansion mechanisms for plasma plume generated by pulsed laser radiation are studied in detail, taking account of plasma ionization effect. Based on the consideration of local conservations of mass, momentum, collected as the assumption that plasma can be viewed as compressible ideal fluid and high temperature-high pressure ideal gas, we develop a new dynamics expansion mechanism for plasma produced by pulsed laser radiation. Using the analytical method, the space number density and pressure evolvement of plasma in cylindrical coordinate are obtained, the dynamics evolvement equations are also derived. The results from the present model indicate that the plasma dynamic expansion behaviour can be evidently influenced by the ionization fraction η. Its effect is similar to a new dynamic source for plasma expansion and increases the expansion acceleration in all directions. The predictions of the expansion of the plasma is affected by the temperature, the average atoms mass and the ionization degree of the plasma are consistent with the experimental results.

Incident intensity, defined by the amount of particles deposited per pulse, is an important parameter in the film growth process of pulsed laser deposition (PLD). Different from previous models, we investigate the irreversible and reversible growth processes by using a kinetic Monte Carlo method and find that island density and film morphology strongly depend on pulse intensity. At higher pulse intensities, lots of adatoms instantaneously diffuse on the substrate surface, and then nucleation easily occurs between the moving adatoms resulting in more smaller-size islands. In contrast, at the lower pulse intensities, nucleation event occurs preferentially between the single adatom and existing islands rather than forming new islands, and therefore the average island size becomes larger in this case. Additionally, our results show that substrate temperature plays an important role in film growth. In particular, it can determine the films shape and weaken the effect of pulse intensity on film growth at the lower temperatures by controlling the mobility rate of atoms. Our results can match the related theoretical and experimental results.

We investigate the effect of CH-doped and F-doped on dielectric properties of SiCOH films deposited by decamethylcyclopentasiloxane (DMCPS) electron cyclotron resonance plasma. The dielectric constant k is closely related to the configurations of films. For the films deposited only using DMCPS, the minimum k is as low as 2.88. By adding CH4 in the precursor, the k value can be reduced to 2.45 due to the film density decreasing by incorporating large size CHx groups. By adding CHF3 in the precursor, the k value can also be reduced to 2.48 due to the incorporation of the weak-polarization F atom. Thus the dielectric constant for SiCOH films depends on not only the film density but also the polarization of atoms. By increasing the film density or by reducing the polarization of atoms under the condition of a lower film density, the low dielectric constant SiCOH films can be obtained.

An experimental method for investigating the effect of medium boundary on distributions of light in the biological tissue phantom intralipid is presented. Measurements of distributions of light in intralipid-10% suspensions at 633 nm are described, in which a narrow collimated beam is incident on the surface of the phantoms and into the different depths inside of the phantoms. The experimental results show that the effect of the boundary of the medium on the curves geometry of light distributions is trivial, but the effect on intensity of scattering light is obvious, the maximal relative change of the energy fluence reaches 53.8 % and the position of the peak of the energy fluence curve has a shift of 1.1 mm in the reverse direction of incident light for the phantom with albedo a = 0.998, and the effect of the boundary is decreased with the increase of the absorption coefficients of tissue phantoms. The experimental results were analysed by the diffusion theory. These studies will be helpful for further understandings of the relation between the boundary of biological tissue and the distribution of light in tissue.

Using CHF3/C6H6 gases, amorphous fluorinated hydrocarbon films (a-C:F:H) were deposited by electron cyclotron resonance (ECR) chemical vapour deposition at room temperature. Dependence of the film properties on variable flow ratios R[CHF3]/{ [CHF3]+[C6H6]} was investigated by infrared absorption, x-ray photoelectron spectroscopy, measurements of the film thickness and dielectric constant. Evidence shows that the film deposition rate decreases linearly with the increasing flow ratios R and the adding of C6H6 source gas to ECR plasma enhances structural cross-linking in the a-C:F:H films. In order to obtain good structural stability of these films, it is necessary to reconcile configurations between C-C bond and H or F terminal atoms carefully. The experimental results indicate that an a-C:F:H film with low dielectric constant (k 400°C) has been deposited successfully at R = 56.3%.

The experimental conditions for photoactivated intermittent fluorescence from nanoscale silver oxide were studied with fluorescence microscopy. Strong fluorescence was observed from the Ag2O particles with size of 10-20 nm excited with both blue and green light. We observed the saturation of photoexcitation with blue light and explained the experimental results using the model of agglomeration of silver atoms to form small clusters and the fluorescence of Ag2 and Ag3 clusters.

Cylinder-shaped Cu80 Ni20 alloy melt is undercooled and solidified by the combination of the electromagnetic levitation technique and the flux treatment method. Nearly constant temperature gradient of 8-10K/cm is realized for the cylindrical melts with different undercooling levels at the bottom ends. The experimental results reveal that with the increase of the undercooling of the melts from 35 to 220K, the microstructures undergo transition from coarse dendrites to granular grains, unidirectional dendrites, and finally to equiaxed grains.

By employing the first-principles pseudopotential plane-wave method, the physical properties of zincblende ZnO are investigated in comparison with those of the common wurtzite structure. Zincblende ZnO is predicted to be a direct gap semiconductor. Compared to the wurtzite structure, the zincblende ZnO is characterized by smaller bandgap and pressure coefficient, larger electron effective mass, increasing static dielectric constants and more covalent bonding. Furthermore, the optical properties including dielectric function and energy loss function of zincblende ZnO were obtained and analysed with some features. These aspects reveal promising applications of zincblende ZnO in optoelectronic devices.

The compression behaviour of Ni77P23 amorphous alloy is investigated at room temperature in a diamond-anvil cell instrument using in-situ high pressure energy dispersive x-ray diffraction with a synchrotron radiation source. The equation of state is determined by fitting the experimental data according to the Birch–Murnaghan equation. It is found that the structure of Ni77P23 amorphous alloy is stable under pressures up to 30.5 GPa. Within the pressure range from zero to the experimental one, the pressure-induced structural relaxation is reversible.

We present the experimental results of nitrogen-vacancy (NV) electron spin decoherence, which are linked to the coexistence of electron spin bath of nitrogen impurity (P1 center) and 13C nuclear spin bath. In previous works, only one dominant decoherence source is studied: P1 electron spin bath for type-Ib diamond; or 13C nuclear spin bath for type-IIa diamond. In general, the thermal fluctuation from both spin baths can be eliminated by the Hahn echo sequence, resulting in a long coherence time (T 2) of about 400 μs. However, in a high-purity type-IIa diamond where 13C nuclear spin bath is the dominant decoherence source, dramatic decreases of NV electron spin T 2 time caused by P1 electron spin bath are observed under certain magnetic field. We further apply the engineered Hahn echo sequence to confirm the decoherence mechanism of multiple spin baths and quantitatively estimate the contribution of P1 electron spin bath. Our results are helpful to understand the NV decoherence mechanisms, which will benefit quantum computing and quantum metrology.

The applicability of diffusion theory for the determination of tissue optical properties from steady-state diffuse reflectance is investigated. Analytical expressions from diffusion theory using the two most commonly assumed boundary conditions at the air-tissue interface and the two definitions of the diffusion coefficient are compared with Monte Carlo simulations. The effects of the choice of the boundary conditions and diffusion coefficients on the accuracy of the findings for the optical parameters are quantified, and criteria for accurate curve-fitting algorithms are developed. It is shown that the error in deriving the optical coefficients is considerably smaller for the solution which uses the extrapolated boundary condition and the diffusion coefficient independence of absorption coefficient, compared to the other three solutions.

The light propagation and distribution in skin tissue is studied by using Monte Carlo technique. The radially resolved diffuse reflectance R and transmittance T vs radius r, angularly resolved R and T vs the exiting angle of the photon, absorption energy density A and internal fluence F vs r and z are simulated. Our results reveal that the light distribution for Gaussian beam is more centralized and its change is more rapid than those of circularly flat beam under the same incident energy and radius, no matter what R and T or A and F are. In addition, except that R(r) for circularly flat beam needs to be fitted by 15-order curve, the others can be fitted by 5-order or 6-order curve.

GaN films with an AlxGa1−xN/AlyGa1−yN superlattice (SL) buffer layer are grown on Si(111) substrates by metal-organic chemical vapor deposition (MOCVD). The structure and strain properties of the samples are studied by optical microscopy, Raman spectroscopy, x-ray diffractometry and atomic force microscopy. The results show that the strain status and crystalline quality of the GaN layers are strongly dependent on the difference of the Al composition between AlxGa1−xN barriers and AlyGa1−yN wells in the SLs. With a large Al composition difference, the GaN film tends to generate cracks on the surface due to the severe relaxation of the SLs. Otherwise, when using a small Al composition difference, the crystalline quality of the GaN layer degrades due to the poor function of the SLs in filtering dislocations. Under an optimized condition that the Al composition difference equals 0.1, the crack-free and compressive strained GaN film with an improved crystalline quality is achieved. Therefore, the AlxGa1−xN/AlyGa1−yN SL buffer layer is a promising buffer structure for growing thick GaN films on Si substrates without crack generation.

The capacitance-voltage characteristics of AlGaN/GaN high-electron-mobility transistors (HEMTS) are measured in the temperature range of 223–398K. The dependence of capacitance on frequency at various temperatures is analyzed. At lower temperatures, the capacitance decreases only very slightly with frequency. At higher frequencies the curves for all temperatures tend to one capacitance value. Such behavior can be attributed to the interface states or the dislocations.

A fractal aggregation behavior in amorphous silicon nitride (SixNy) films deposited by microwave electron cyclotron resonance plasma chemical vapor deposition is reported. The fractal structure and dimension of 1.45 obtained by experiment and computer simulation are all in excellent agreement with the result predicted by the cluster-cluster-aggregation model. The forming of fractal structure is related to the change of discharge mode between ring plasma and bulk plasma.

We report the ultra-high efficiency transport of cold 87Rb atoms using a moving magnetic quadrupole potential generated by three overlapping pairs of fixed coils. The transfer efficiency is better than 97%, which is the highest ever reported to our knowledge. The temperature increase due to heating is less than 10 when the initial cloud temperature is 110 μK. Our setup is similar to the magnetic transferring belt design [Phys. Rev. A 63 (2001) 031401(R)], although it is simpler because the push coil is not required. We use it to transport atoms away from a magneto-optical trap to very close to the wall of the glass cell, facilitating future experiments employing three-dimensional optical lattices, high resolution in-situ imaging, and magnetic Feshbach resonances.

We present a design of a low frequency ultra-thin compact and polarization-insensitive metamaterial absorber (MA). The designed MA is a two-layer structure, a periodic array of novel split-ring resonators (SRRs), which are constructed in an FR4 dielectric layer, and another ultra-thin grounded sheet is attached to the bottom. Numerical simulated results show that the proposed MA can realize effective absorption at the frequency 281.9 MHz, and its overall thickness is just only 0.29% of the resonant wavelength, the unit space is only 2.57%, and the absorbance is kept well for a wide range of incident angles for different polarizations. In addition, the proposed MA is changed into a more compact one when the inter-digital structures are introduced in the SRRs. One convenient experiment is carried out in a rectangular waveguide simulator.

We report on the high breakdown performance of AlGaN/GaN high electron mobility transistors (HEMTs) grown on 4-inch silicon substrates. The HEMT structure including three Al-content step-graded AlGaN transition layers has a total thickness of 2.7 μm. The HEMT with a gate width WG of 300 μm acquires a maximum off-state breakdown voltage (BV) of 550 V and a maximum drain current of 527 mA/mm at a gate voltage of 2 V. It is found that BV is improved with the increase of gate-drain distance LGD until it exceeds 8 μm and then BV is tended to saturation. While the maximum drain current drops continuously with the increase of LGD. The HEMT with a WG of 3 mm and a LGD of 8 μm obtains an off-state BV of 500 V. Its maximum leakage current is just 13 μA when the drain voltage is below 400 V. The device exhibits a maximum output current of 1 A with a maximum transconductance of 242 mS.

We study the effects of film thickness on lattice parameters, direct band gap and photovoltaic outputs in the sol-gel derived BiFeO3 thin films. With the change of the film thickness, the great transitions will take place in the preferred orientation and lattice parameters. Furthermore, the photovoltaic outputs are significantly dependent on the film thickness. The results show that the open circuit voltage gradually increases and the short circuit current reciprocally decreases with the increase of film thickness. In particular, we demonstrate for the first time that there are tunable photovoltaic outputs with external electric field polarization switching in the polycrystalline BiFeO3 film, which is critical for the future device applications based on the photovoltaic properties of BiFeO3 films.