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Your search keyword '"Ti Wen"' showing total 9 results
Start Over Author "Ti Wen" Journal chinese physics letters
9 results on '"Ti Wen"'

1. Damage Removal and Strain Relaxation in As + -Implanted Si 0.57 Ge 0.43 Epilayers Grown by Gas Source Molecular Beam Epitaxy

Author

Dian-zhao Sun, Xue-feng Liu, Ti-wen Fan, Lyu-fan) Zou Lü-fan (Zou, Jing-wei Zhang, and Zhanguo Wang

Subjects
Materials science, Strain (chemistry), Transmission electron microscopy, Analytical chemistry, General Physics and Astronomy, Relaxation (physics), Heterojunction, Irradiation, Rapid thermal annealing, Molecular beam epitaxy
Abstract

The damage removal and strain relaxation in the As+-implanted Si0.57Ge0.43 epilayers were studied by double-crystal x-ray diffractometry and transmission electron microscopy. The results presented in this paper indicate that rapid thermal annealing at temperatures higher than 950 degrees C results in complete removal of irradiation damage accompained by the formation of GeAs precipitates which enhance the removal process of dislocations.

Published
1997

2. Diffusion of Ion Implanted As in Si 1- x Ge x Epilayers

Author

Zhang Jing-wei, Liu Xue-Feng, Wang Zhan-Guo, Zou Lü-fan (Zou Lyu-fan), Sun Dian-zhao, and Fan Ti-wen

Subjects
Materials science, Silicon, chemistry, Annealing (metallurgy), Analytical chemistry, General Physics and Astronomy, chemistry.chemical_element, Ion
Abstract

Diffusion of implanted As ion in relaxed Si1-xGex was studied as a function of Ge content over a wide range of Ge fractions (0-43%) and annealing temperature, and was compared to diffusion in Si. Experimental results showed that the As diffusion is enhanced with increasing annealing temperature for certain Ge content and strongly dependent on the higher Ge content and the faster As diffusion.

Published
1997

6. Regrowth of MBE-GaAs films on Si substrates by high energy ion-implantation and subsequent annealing

Author

Ding Aiju, Xiao Guangming, Zhang Jingping, Liu Jiarui, Fan Ti-wen, Zhu Peiruan, Yin Shiduan, and Zhou Jun-Ming

Subjects
High energy, Laser raman, Ion implantation, Materials science, business.industry, Scattering, Annealing (metallurgy), General Physics and Astronomy, Optoelectronics, Rapid thermal annealing, Mass spectrometry, business
Abstract

4.2 Me V 7Li channeling technique, laser Raman scattering spectrometry, and TEM have been utilized to study the regrowth of MBE-GaAs films of similar μm thick on Si substrates by Si+ implantation (0.6-2.6 MeV) and subsequent rapid thermal annealing. The results showed that crystalline disorder was greatly reduced in the recrystalized layers especially at the interface.

Published
1989

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