99 results on '"Song, Zhi"'
Search Results
2. Structural Evolution and Phase Change Properties of C-Doped Ge 2 Sb 2 Te 5 Films During Heating in Air
3. Atomic-Ordering-Induced Quantum Phase Transition between Topological Crystalline Insulator and Z 2 Topological Insulator
4. Crystallization Process of Superlattice-Like Sb/SiO 2 Thin Films for Phase Change Memory Application
5. Characteristics of Sn-Doped Ge 2 Sb 2 Te 5 Films Used for Phase-Change Memory
6. Electrical Properties of Ag-Doped Ge 2 Sb 2 Te 5 Films Used for Phase Change Random Access Memory
7. Reversible Phase Change for C-RAM Nano-Cell-Element Fabricated by Focused Ion Beam Method
8. Effect of Annealing Temperature on the Microstructure and Resistivity of Ge 2 Sb 2 Te 5 Films
9. Microstructural and Electrical Properties of ZrO 2 Thin Films Prepared on silicon on Insulator with Thin Top silicon
10. High Speed and Ultra-Low-Power Phase Change Line Cell Memory Based on SiSb Thin Films with Nanoscale Gap of Electrodes Less Than 100 nm
11. Properties of Seamless W Sub-Micro Electrode Used for Phase Change Memory
12. Reactive Ion Etching as Cleaning Method Post Chemical Mechanical Polishing for Phase Change Memory Device
13. Investigation of SOI Substrates Incorporated with Buried MoSi 2 for High Frequency SiGe HBTs
14. Three-Dimensional Simulations of RESET Operation in Phase-Change Random Access Memory with Blade-Type Like Phase Change Layer by Finite Element Modeling
15. Low-Frequency Noise in Gate Tunable Topological Insulator Nanowire Field Emission Transistor near the Dirac Point
16. Current Controlled Relaxation Oscillations in Ge 2 Sb 2 Te 5 -Based Phase Change Memory Devices
17. Remarkable Resistance Change in Plasma Oxidized TiO x /TiN x Film for Memory Application
18. Ge 1 Sb 2 Te 4 Based Chalcogenide Random Access Memory Array Fabricated by 0.18-μm CMOS Technology
19. Chalcogenide Random Access Memory Cell with Structure of W Sub-Microtube Heater Electrode
20. Effect of Chemicals on Chemical Mechanical Polishing of Glass Substrates
21. Total Dose Radiation Tolerance of Phase Change Memory Cell with GeSbTe Alloy
22. Damascene Array Structure of Phase Change Memory Fabricated with Chemical Mechanical Polishing Method
23. Phase Transition Phenomena in Ultra-Thin Ge 2 Sb 2 Te 5 Film
24. Fabrication and Characterization of ZnO-Based Film Bulk Acoustic Resonator with a High Working Frequency
25. Single Crystal Si Layers on Glass Fabricated by Hydrophilic Fusion Bonding and Smart-Cut Technology
26. Single Cell Element of Chalcogenide Random Access Memory Fabricated with the Focused Ion Beam Method
27. Structure and Electrical Properties of Ge 2 Sb 2 Te 5 Thin Film Used for Ovonic Unified Memory
28. High-Quality ZrO 2 Thin Films Deposited on Silicon by High Vacuum Electron Beam Evaporation
29. Effect of Abrasive Concentration on Chemical Mechanical Polishing of Sapphire
30. Characterization of Ge Doping on Sb 2 Te 3 for High-Speed Phase Change Memory Application
31. Set Programming Method and Performance Improvement of Phase Change Random Access Memory Arrays
32. Switching Characteristics of Phase Change Memory Cell Integrated with Metal-Oxide Semiconductor Field Effect Transistor
33. Effect of Cations on the Chemical Mechanical Polishing of SiO 2 Film
34. An Improvement of the Thermal Stability of SnTe through Nitrogen Doping
35. Germanium Nitride as a Buffer Layer for Phase Change Memory
36. Chemical Mechanical Polishing of Ge 2 Sb 2 Te 5 Using Abrasive-Free Solutions of Iron Trichloride
37. An Integrated Phase Change Memory Cell with Dual Trench Epitaxial Diode Selector
38. A Compact Spice Model with Verilog-A for Phase Change Memory
39. Enhanced Performance of Phase Change Memory Cell Element by Initial Operation and Non-Cumulative Programming
40. Si 3.5 Sb 2 Te 3 Phase Change Material for Low-Power Phase Change Memory Application
41. Three-Dimensional Finite Element Simulations for the Thermal Characteristics of PCRAMs with Different Buffer Layer Materials
42. Simulation of Voltage SET Operation in Phase-Change Random Access Memories with Heater Addition and Ring-Type Contactor for Low-Power Consumption by Finite Element Modeling
43. Three-Dimensional Finite Element Analysis of Phase Change Memory Cell with Thin TiO 2 Film
44. Nanoscale Tapered Pt Bottom Electrode Fabricated by FIB for Low Power and Highly Stable Operations of Phase Change Memory
45. An SPICE Model for PCM Based on Arrhenius Equation
46. Growth of High Quality Strained-Si on Ultra-Thin SiGe-on-Insulator Substrate
47. Chemical Mechanical Polishing of Ge2Sb2Te5 Using Abrasive-Free Solutions of Iron Trichloride.
48. Simulation of Phase-Change Random Access Memory with Ring-Type Contactor for Low Reset Current by Finite Element Modelling.
49. Reversible Phase Change for C-RAM Nano-Cell-Element Fabricated by Focused Ion Beam Method.
50. High Speed and Ultra-Low-Power Phase Change Line Cell Memory Based on SiSb Thin Films with Nanoscale Gap of Electrodes Less Than 100 nm.
Catalog
Books, media, physical & digital resources
Discovery Service for Jio Institute Digital Library
For full access to our library's resources, please sign in.