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Nonpolar ( 11 2 ¯ 0 ) plane In x Ga1−x N epilayers comprising the entire In content (x) range were successfully grown on nanoscale GaN islands by metal-organic chemical vapor deposition. The structural and optical properties were studied intensively. It was found that the surface morphology was gradually smoothed when x increased from 0.06 to 0.33, even though the crystalline quality was gradually declined, which was accompanied by the appearance of phase separation in the In x Ga1−x N layer. Photoluminescence wavelengths of 478 and 674 nm for blue and red light were achieved for x varied from 0.06 to 0.33. Furthermore, the corresponding average lifetime (τ 1/e ) of carriers for the nonpolar InGaN film was decreased from 406 ps to 267 ps, indicating that a high-speed modulation bandwidth can be expected for nonpolar InGaN-based light-emitting diodes. Moreover, the bowing coefficient (b) of the ( 11 2 ¯ 0 ) plane InGaN was determined to be 1.91 eV for the bandgap energy as a function of x.

We report a universal transfer methodology for producing artificial heterostructures of large-area freestanding single-crystalline WTe2 membranes on diverse target substrates. The transferred WTe2 membranes exhibit a nondestructive structure with a carrier mobility comparable to that of as-grown films (∼ 179–1055 cm2 · V−1 · s−1). Furthermore, the transferred membranes show distinct Shubnikov–de Haas quantum oscillations as well as weak localization/weak anti-localization. These results provide a new approach to the development of atom manufacturing and devices based on atomic-level, large-area topological quantum films.

We fabricated 4H-SiC ultraviolet avalanche photodiode (APD) arrays and systematically investigated the effect of threading dislocations on electrical and single photon detection characteristics of 4H-SiC APDs. Based on a statistical correlation study of individual device performance and structural defect mapping revealed by molten KOH etching, it is determined with high confidence level that even a single threading dislocation within APD active region would lead to apparent device performance degradation, including increase of dark current near breakdown voltage, premature breakdown and reduction of single photon detection efficiency at fixed dark count rate.

Square microdisks with round corners are fabricated using a standard GaN-based blue LED on Si substrates. Whispering gallery-like modes in the square microdisks are investigated by finite-difference time-domain simulation. The simulation results reveal that the round corners in square microdisks can substantially suppress the number of light propagation paths and further reduce the number of optical modes. A confocal micro-photoluminescence is performed to analyze the optical properties of the square microdisks at room temperature. The single-mode dominant resonant emission is obtained in the square microdisk with corner radius of 1.5 μm.

GaN-based micro light emitting diodes (micro-LEDs) on silicon (Si) substrates with 40 μm in diameter are developed utilizing standard photolithography and inductively coupled plasma etching techniques. From current-voltage curves, the relatively low turn-on voltage of 2.8 V and low reverse leakage current in the order of 10 −8 A/cm 2 indicate good electrical characteristics. As the injection current increases, the electroluminescence emission wavelength hardly shifts at around 433 nm, and the relative external quantum efficiency slightly decays, because the impact of quantum-confined Stark effect is not serious in violet-blue micro-LEDs. Since GaN-LEDs are cost effective on large-area Si and suitable for substrate transfer or vertical device structures, the fabricated micro-LEDs on Si should have promising applications in the fields of high-resolution display and optical communication.

Two-inch Ga2O3 films with ( )-orientation are grown on c-sapphire at 850–1050°C by hydride vapor phase epitaxy. High-resolution x-ray diffraction shows that pure β-Ga2O3 with a smooth surface has a higher crystal quality, and the Raman spectra reveal a very small residual strain in β-Ga2O3 grown by hydride vapor phase epitaxy compared with bulk single crystal. The optical transmittance is higher than 80% in the visible and near-UV regions, and the optical bandgap energy is calculated to be 4.9 eV.

Design, fabrication and characterizations of GaN-based blue micro light emitting diode (LED) arrays are reported. The GaN micro-LED array consists of 320 × 256 pixels with a pitch size of 30μm. Each pixel is 25 × 25 μm 2 in size, which is designed for backside emission and high density flip-chip packaging. The selected LED pixels being tested exhibit good uniformity in terms of turn-on voltage and reverse leakage current. The efficiency droop behavior and reliability behavior under high forward current stress are also studied. The micro-LED pixel shows improved reliability, which is likely caused by enhanced heat dissipation.

Computed tomography has been proven to be useful for non-destructive inspection of structures and materials. We build a three-dimensional imaging system with the photonically generated incoherent noise source and the Schottky barrier diode detector in the terahertz frequency band (90–140 GHz). Based on the computed tomography technique, the three-dimensional image of a ceramic sample is reconstructed successfully by stacking the slices at different heights. The imaging results not only indicate the ability of terahertz wave in the non-invasive sensing and non-destructive inspection applications, but also prove the effectiveness and superiority of the uni-traveling-carrier photodiode as a terahertz source in the imaging applications.

A sequential deposition method is developed, where the hybrid organic–inorganic halide perovskite (CH3NH3Pb (I1−x Br x )3) is synthesized using precursor solutions containing CH3NH3I and PbBr2 with different mole ratios and reaction times. The perovskite achieved here is quite stable in the atmosphere for a relatively long time without noticeable degradation, and the perovskite nanowires are proved to be single crystalline structure, based on transmission electron microscopy. Furthermore, strong red photoluminescence from perovskite is observed in the wavelength range from 746 nm to 770 nm with the increase of the reaction time, on account of the exchanges between I− ions and Br− ions in the perovskite crystal. Lastly, the influences of concentration and reaction time of the precursor solutions are discussed, which are important for evolution of hybrid perovskite from nanocuboid to nanowire and nanosheet.

Topological crystalline insulators (TCIs) have attracted worldwide interest since their theoretical predication and have created exciting opportunities for studying topological quantum physics and for exploring spintronic applications. In this work, we successfully synthesize PbTe nanowires via the chemical vapor deposition method and demonstrate the existence of topological surface states by their 2D weak anti-localization effect and Shubnikov–de Haas oscillations. More importantly, the surface state contributes ~61% of the total conduction, suggesting dominant surface transport in PbTe nanowires at low temperatures. Our work provides an experimental groundwork for researching TCIs and is a step forward for the applications of PbTe nanowires in spintronic devices.

It is well known that -nitride semiconductors can generate the magnitude of MV/cm polarization electric field which is comparable with their ionization electric fields. To take full advantage of the polarization electric field, we design an N-face AlGaN solar-blind avalanche photodiode (APD) with an Al0.45Ga0.55N/Al0.3Ga0.7N heterostructure as separate absorption and multiplication (SAM) regions. The simulation results show that the N-face APDs are more beneficial to improving the avalanche gain and reducing the avalanche breakdown voltage compared with the Ga-face APDs due to the effect of the polarization electric field. Furthermore, the Al0.45Ga0.55N/Al0.3Ga0.7N heterostructure SAM regions used in APDs instead of homogeneous Al0.45Ga0.55N SAM structure can increase significantly avalanche gain because of the increased hole ionization coefficient by using the relatively low Al-content AlGaN in the multiplication region. Meanwhile, a quarter-wave AlGaN/AlN distributed Bragg reflector structure at the bottom of the device is designed to remain a solar-blind characteristic of the heterostructure SAM-APDs.

The ultrashort intense laser pulse transmitted by a Nd: YAG laser system is used to generate the sound in water. Experiments show that the light beam is converged by an optical lens at two points. This fact implies the time response is inherent in the changes of optical index of water caused by the light intensity.

Precipitation behaviors of Cu and Ni on Frank-type partial dislocations in Czochralski-grown silicon are investigated. It is found that Cu develops precipitate colonies in the region away from Frank partials and does not decorate Frank partials when the specimens are cooled slowly, while Ni decorates them although the concentration of Ni is lower than that of Cu in the specimens. The results indicate that Ni impurity is easier to decorate Frank partials than Cu impurity in Si.

GaN nanorods are fabricated using inductively coupled plasma etching with Ni nano-island masks. The poly [2-methoxy-5-(2-ethyl)hexoxy-1,4-phenylenevinylene] (MEH-PPV)/GaN-nanorod hybrid structure is fabricated by depositing the MEH-PPV film on the GaN nanorods by using the spin-coating process. In the hybrid structure, the spatial separation is minimized to achieve high-efficiency non-radiative resonant energy transfer. Optical properties of a novel device consisting of MEH-PPV/GaN-nanorod hybrid structure is studied by analyzing photoluminescence (PL) spectra. Compared with the pure GaN nanorods, the PL intensity of the band edge emission of GaN in the MEH-PPV/GaN-nanorods is enhanced as much as three times, and the intensity of the yellow band is suppressed slightly. The obtained results are analyzed by energy transfer between the GaN nanorods and the MEH-PPV. An energy transfer model is proposed to explain the phenomenon.

The electrical instability behaviors of amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) under ultraviolet (UV) illumination are studied. As UV radiation dosage increases, the turn-on voltage of the TFT shows continuous negative shift, which is accompanied by enhanced degradation of sub-threshold swing and field-effect mobility. The electrical instability is caused by the increased carrier concentration and defect states within the device channel, which can be further attributed to additional oxygen vacancy generation and ionization of oxygen vacancy related defects upon UV illumination, respectively. Furthermore, the performance of the a-IGZO TFT treated with UV radiation can gradually recover to its initial state after long-time storage.

Cubic silicon carbide films (β-SiC) have been successfully grown on monocrystalline silicon wafers by hot filament chemical vapor deposition (HFCVD) at temperatures ranging from 500 to 650°C, fulfilled by a two step process. Raman spectrum of the HFCVD-grown β-SiC films shows a characteristic peak at 975 cm-1 with a full width at half maximum (FWHM) of 76 cm-1. At room temperature, the films emit visible photoluminescence at 580 nm with an FWHM of 0.4 eV. X-ray diffraction and x-ray photoelectron spectroscopy investigations reveal that the epitaxial films are of good quality.

We design and fabricate 4H-SiC UV avalanche photodiodes (APDs) with positive beveled mesa, which exhibit low leakage current and high avalanche gain when working in the Geiger mode. The single photon counting performance of the SiC APDs is studied by using a passive-quenching circuit. A new method to determine the exact breakdown voltage of the APD is proposed based on the initial emergence of photon count pulses. The photon count rate and dark count rate of the APD are also evaluated as a function of quenching resistance.

Microstructures of GaN buffer layers grown on Si (111) substrates using rapid thermal process low-pressure metalorganic chemical vapor deposition are investigated by an atomic force microscope (AFM) and a high-resolution transmission electron microscope (HRTEM). AFM images show that the islands appear in the GaN buffer layer after annealing at high temperature. Cross-sectional HRTEM micrographs of the buffer region of these samples indicate that there are bunched steps on the surface of the Si substrate and a lot of domains in GaN misorienting each other with small angles. The boundaries of those domains locate near the bunched steps, and the regions of the film on a terrace between steps have the same crystal orientation. An amorphous-like layer, about 3 nm thick, can also be observed between the GaN buffer layer and the Si substrate.

Sb-doped lead tungstate (PWO) crystals were grown and investigated. The measurements of Sb content in crystals indicated that the segregation coefficient of Sb in PWO is about 0.63. Even with a little Sb3+ introduced into PWO crystal, the transmission, especially the light yield was enhanced significantly. Furthermore, after the Sb-doped PWO crystals were annealed, not only the fast component still remained a high percentage but also the radiation hardness was improved evidently. The main reason may be that Sb-doping can compensate the composition deficiency and then reduce the density of hole centers such as Pb3+ and O-.

In many critical civil and emerging military applications, low-level UV detection, sometimes at single photon level, is highly desired. In this work, a mesa-type 4H-SiC UV avalanche photodiode (APD) is designed and fabricated, which exhibits low leakage current and high avalanche gain. When studied by using a passive quenching circuit, the APD exhibits self-quenching characteristics due to its high differential resistance in the avalanche region. The single photon detection efficiency and dark count rate of the APD are evaluated as functions of discrimination voltage and over-drive voltage. The optimized operation conditions of the single photon counting APD are discussed.

Fe-doped In2O3 dilute magnetic semiconducting nanowires are fabricated on Au-deposited Si substrates by the chemical vapor deposition technique. It is confirmed by energy dispersive x-ray spectroscopy (EDS), x-ray photoelectron spectroscopy (XPS) and Raman spectroscopy that Fe has been successfully doped into lattices of In2O3 nanowires. The EDS measurements reveal a large amount of oxygen vacancies existing in the Fe-doped In2O3 nanowires. The Fe dopant exists as a mixture of Fe2+ and Fe3+, as revealed by the XPS. The origin of room-temperature ferromagnetism in Fe-doped In2O3 nanowires is explained by the bound magnetic polaron model.

A series of Co-Ag granular films were deposited onto a glass substrate with a thickness on the order of 400 nm using the ion-beam cosputtering technique. Granular films ranging in composition from about 0-100% fraction by volume of cobalt have been prepared. Polar Kerr rotation spectra of the films were measured at room temperature in the wavelength region between 400 and 850 nm. A maximum Kerr rotation angle (θK) of 0.28° was obtained when a magnetic field of 10 kOe was applied perpendicular to the film plane. Our results indicate that the Co particle density and the microstructure between the Co particles and Ag matrix may play an important role in the Kerr rotation.

A novel fishing rod-shaped GaN nanorod is successfully fabricated through a new method by using the two-step growth technology. This growth method is applicable to continuous synthesis and is able to produce a large number of single-crystalline GaN nanorods with a relatively high purity and at a low cost. X-ray diffraction, scanning electron microscopy and high-resolution transmission electron microscopy are used to characterize the as-synthesized nanorods. The results show that most of the nanorods consist of a main rod and a top curved thread. It is single-crystal GaN with hexagonal wurtzite structure. The representative photoluminescence spectrum at room temperature exhibits a strong UV light emission band centered at 370.8 nm. Furthermore, a possible two-stage growth mechanism of the fishing rod-shaped GaN nanorod is also briefly discussed.

Al0.5Ga0.5 N-based metal-semiconductor-metal photodetectors (PDs) with a large device area of 5 × 5 mm2 are fabricated on a sapphire substrate, which are tested for vacuum ultraviolet light detection by using a synchrotron radiation source. The PD exhibits low dark current of less than 1 pA under 30 V bias and a spectral cutoff around 260 nm, corresponding to the energy bandgap of Al0.5Ga0.5N. A peak photo-responsivity of 14.68 mA/W at 250 nm with a rejection ratio (250/360 nm) of more than four orders of magnitude is obtained under 30 V bias. For wavelength less than 170 nm, the photoresponsivity of the PD is found to increase as wavelength decreases, which is likely caused by the enhanced photoemission effect.

We develop a new method to prepare micropowders with a combination of jet-milling and electrostatic dispersion techniques. The dispersiveness of the powder can be obviously improved by charging the particles during the process of jet-milling. Calcium carbonate (CaCO3) powders with high dispersion are prepared by using this method from two different initial particle sizes (10.93 and 25.43 μm). The experimental studies and theoretical analysis about the effects of preparation parameter on dispersiveness of the powder are investigated, showing that the jet-milling/electrostatic dispersion (J/E) is a considerably effective way to prepare micropowder in ambient atmosphere. It is found that the strength of electrostatic field and particle radius of the raw powder strongly affect the dispersion. The average particle size of both powders decreases with the increase in charging voltage while the reduction of particle size is more obvious in the powder with larger initial particle size.

Based on modification of the simplified coherent potential approximation, a model for the band-gap energy of InxGayAl1−x−yN is developed. The parameters of the model are obtained by fitting the experimental band-gap energy of their ternary alloys. It is found that the results agree with the experimental values better than those reported by others, and that the band-gap reduction of InxGayAl1−x−yN with increasing In or Ga content is mainly due to enhanced intraband coupling within the conduction band, and separately within the valence band.

We report on the photoluminescent characteristics of InGaN/GaN multiple quantum well (MQW) nanorod arrays with high internal quantum efficiency. The InGaN/GaN MQWs are grown by metalorganic chemical vapor deposition on c-plane sapphire substrates, and then the MQW nanorod arrays are fabricated by using inductively coupled plasma etching with self-assembled Ni nanoparticle mask with low-damage etching technique. The typical diameter of the nanorods is from 200 nm to 300 nm and the length is around 800 nm, which almost is dislocation free. At room temperature, an enhancement of 3.1 times in total integrated photoluminescence intensity is achieved from the MQW nanorod arrays, in comparison to that of the as-grown MQW structure. Based on the temperature-dependent photoluminescence measurements, the internal quantum efficiency of the nanorod structure is 59.2%, i.e., 1.75 times of as-grown MQW structure (33.8%). Therefore, the nanorod structure with a significant reduction of defects can be a very promising candidate for highly efficient light emitting devices.

The effects of a polarization field on the current transport mechanisms in ultraviolet light emitting diodes (UV-LEDs) are studied by analyzing forward current-voltage (I—V) characteristics based on the experimental data and theoretical simulation. The results indicate that polarization electric field suppresses the diffusion current and meanwhile enhances the tunneling current in the metal-face UV LEDs under forward bias. The presence of a large polarization field in the deep UV-LEDs is responsible for the current transport mechanism dominated by the tunneling process at a moderate forward bias.

GaN with hexagonal pyramids is fabricated using the photo-assisted electroless chemical etching method. Defective areas of the GaN substrate are selectively etched in a mixed solution of KOH and K2S2O8 under ultraviolet illumination, producing submicron-sized pyramids. Hexagonal pyramids on the etched GaN with well-defined {101?1?} facets and very sharp tips are formed. High-resolution x-ray diffraction shows that etched GaN with pyramids has a higher crystal quality, and micro-Raman spectra reveal a tensile stress relaxation in GaN with pyramids compared with normal GaN. The cathodoluminescence intensity of GaN after etching is significantly increased by three times, which is attributed to the reduction in the internal reflection, high-quality GaN with pyramids and the Bragg effect.

Edge termination is one of the key technologies for fabricating high voltage Schottky barrier diodes (SBDs), which could effectively reduce the peak electric field along the Schottky contact edge and enhance the breakdown voltage. We adopt a high-resistivity ring structure as the edge termination for planar GaN SBDs. The edge termination is formed by self-aligned boron implantation on the edge of devices to form a highly damaged layer. In the implant dose and energy ranges studied experimentally, the GaN SBDs show improved blocking characteristics in terms of reverse leakage current and breakdown voltage at higher implant dose or implant energy. Meanwhile, the forward turn-on characteristics of the GaN SBDs exhibit no apparent change.

GaN ultraviolet (UV) p—i—n photodetectors (PDs) with a 40 nm thin p-GaN contact layer are fabricated on sapphire substrates, which exhibit enhanced quantum efficiency especially in a deep-UV wavelength range. The PDs show good rectification behavior and low dark current in pA level for reverse bias up to −10 V. Under zero bias, the maximum quantum efficiency of the PD at 360 nm is close to 59.4% with a UV/visible rejection ratio more than 4 orders of magnitude. Even at a short wavelength of 280 nm, the quantum efficiency of the PD is still around 47.5%, which is considerably higher than that of a control device with a thicker p-GaN contact layer. The room temperature thermal noise limited detectivity of the PD is calculated to be ~4.96 × 1014 cmHz1/2 W−1.

We present experimental and numerical studies on the enhanced light narrow transmission through cascaded Au/SiOxNy/Au aperture arrays by varying the refractive index and thickness of SiOxNy. It is found that the enhancement as well as narrowing of the optical transmission originates from the coupling role of surface plasmon polaritons. The results indicate that the transmission enhancement is highly dependent on the refractive index and thickness of SiOxNy. A higher transmission efficiency and narrower peak are obtained in Au/SiO2.1N0.3/Au structure with a small refractive index (1.6) and thin thickness (0.2 μm).

Terahertz (THz) quantum well photodetectors (QWPs) are an extension of quantum well infrared photodetectors in the THz region. We construct an imaging system based on a THz QWP with a narrow response range from 3 THz to 6 THz. The peak responsivity of the THz QWP having background-limited performance is about 0.5 A/W, and the corresponding detectivity reaches 1011 cmHz1/2/W at temperature of 4.2 K. We obtain the images of a concealed object by the imaging system and prove that THz QWPs have the potential for imaging applications.

The in-plane optical anisotropic properties of the non-polar a-plane GaN films grown by metal organic chemical vapour deposition are investigated by using polarised photoluminescence (PL), optical transmission and Raman scattering measurements. Through polarised PL and transmission spectra, the in-plane optical anisotropic properties of a-plane GaN film are found, which are attributed to the topmost valance band (at Γ point) split into three sub-bands under anisotropic strain. The PL spectra also exhibit that the light hole band moves up more rapidly than the spin-orbit crystal-field spilt-off hole band with the increasing in-plane anisotropic compressive strain. Raman scattering spectra under different configurations further indicate the in-plane anisotropy and the hexagonal crystalline structure of these a-plane GaN films.

Roughened surfaces of light-emitting diodes (LEDs) provide substantial improvement in light extraction efficiency. By preparing the self-assemble nanoporous Ni template through rapid annealing of a thin Ni film, followed by a low damage dry etching process, a p-side-up LED with a roughened surface has been fabricated. Compared to a conventional LED with plane surface, the light output of LEDs with nanoporous p-GaN surface increases up to 71% and 36% at applied currents of 1 mA and 20 mA, respectively. Meanwhile, the electrical characteristics are not degraded obviously after surface roughening.

AlGaN-based back-illuminated solar-blind ultraviolet (UV) p—i—n photodetectors (PDs) with high quantum efficiency are fabricated on sapphire substrates. To improve the overall performance of the PD, a series of structural design considerations and growth procedures are implemented in the epitaxy process. A distinct wavelength-selective photo-response peak of the PD is obtained in the solar-blind region. When operating in photovoltaic mode, the PD exhibits a solar-blind/UV rejection ratio of up to 4 orders of magnitude and a peak responsivity of ~113.5 mA/W at 270 nm, which corresponds to an external quantum efficiency of ~52%. Under a reverse bias of −5 V, the PD shows a low dark current of ~1.8 pA and an enhanced peak quantum efficiency of ~64%. The thermal noise limited detectivity is estimated to be ~ 3.3 × 1013 cmHz1/2W−1

The influence of dry etching damage on the internal quantum efficiency of InGaN/GaN nanorod multiple quantum wells (MQWs) is studied. The samples were etched by inductively coupled plasma (ICP) etching via a self-assembled nickel nanomask, and examined by room-temperature photoluminescence measurement. The key parameters in the etching process are rf power and ICP power. The internal quantum efficiency of nanorod MQWs shows a 5.6 times decrease substantially with the rf power increasing from 3 W to 100 W. However, it is slightly influenced by the ICP power, which shows 30% variation over a wide ICP power range between 30 W and 600 W. Under the optimized etching condition, the internal quantum efficiency of nanorod MQWs can be 40% that of the as-grown MQW sample, and the external quantum efficiency of nanorod MQWs can be about 4 times that of the as-grown one.

We investigate the leakage current of ultra-shallow Ni-silicided SiGe/Si junctions for 45 nm CMOS technology using a Si cap layer and the pre-amorphization implantation (PAI) process. It is found that with the conventional Ni silicide method, the leakage current of a p+ (SiGe)—n(Si) junction is large and attributed to band-to-band tunneling and the generation-recombination process. The two leakage contributors can be suppressed quite effectively when a Si cap layer is added in the Ni silicide method. The leakage reduction is about one order of magnitude and could be associated with the suppression of the agglomeration of the Ni germano-silicide film. In addition, the PAI process after the application of a Si cap layer has little effect on improving the junction leakage but reduces the sheet resistance of the silicide film. As a result, the novel Ni silicide method using a Si cap combined with PAI is a promising choice for SiGe junctions in advanced technology.

InxGa1−xN alloys with low indium composition x in the range 0.13 ≤ x ≤ 0.23 are systematically studied mainly based on a Raman scattering technique. Scanning electron microscopy and x-ray diffraction results show that our samples can be divided into two groups: pseudomorphic (0.13 ≤ x ≤ 0.16) and relaxed (0.18 ≤ x ≤ 0.23). The prominent enhancement of A1 longitudinal-optical (LO) mode is found with 325 nm laser excitation. For pseudomorphic samples, the frequencies of A1 (LO) phonons agree well with the theoretical predictions, which verifies that the samples are fully strained. For relaxed InxGa1−xN samples, a linear dependence of the A1 (LO) mode frequency is obtained: Ω0(x) = (740.8 ± 3.3) − (143.1 ± 16.0)x, which is the evidence of one-mode behavior in InxGa1−xN ternary alloys. Residual strains in these partially relaxed samples are also evaluated.

The reaction mechanism and simulations of the metal-organic chemical vapor deposition reactor for ZnO film growth are presented, indicating the temperature of the reaction species. The gas phase pre-reaction can be modulated by several factors or conditions. Simulations verify the relationships between temperature and pyrolysis of precursors, and further reveal that the substrate temperature and flow rate of cooling water have great impacts on the temperature distribution. The experimental results agree with the simulations.

Blue-red complex light emitting InGaN/GaN multi-quantum well (MQW) structures are fabricated by metal organic chemical vapor deposition (MOCVD). The structures are grown on a 2-inch diameter (0001) oriented (c-face) sapphire substrate, which consists of an approximately 2-μm-thick GaN template and a five-period layer consisting of a 4.9-nm-thick In0.18Ga0.82N well layer and a GaN barrier layer. The surface morphology of the MQW structures is observed by an atomic force microscope (AFM), which indicates the presence of islands of several tens of nanometers in height on the surface. The high resolution x-ray diffraction (XRD) θ/2θ scan is carried out on the symmetric (0002) of the InGaN/GaN MQW structures. At least four order satellite peaks presented in the XRD spectrum indicate that the thickness and alloy compositions of the individual quantum wells are repeatable throughout the active region. Besides the 364 nm GaN band edge emission, two main emissions of blue and amber light from these MQWs are found, which possibly originate from the carrier recombinations in the InGaN/GaN QWs and InGaN quasi-quantum dots embedded in the QWs.

AlGaN/GaN-based planar Schottky barrier diodes with various spacings between ohmic and Schottky contacts are fabricated without any edge termination. The reverse leakage current of the devices quickly saturates at low reverse bias when the two-dimensional electron gas (2DEG) at the AlGaN/GaN interface is fully depleted. The corresponding breakdown voltage is found to follow a linear dependence on contact spacing and exceeds 1100 V at a contact spacing of 20 μm, yielding a high V2BR/RON value of > 280 MWcm−2. The observations are tentatively explained by a "natural super-junction" theory, in which ionized surface states at front surface of the AlGaN barrier have to be neutralized by reverse surface leakage current from the Schottky electrode.