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A novel silicon-on-insulator (SOI) metal-oxide-semiconductor field effect transistor (MOSFET) with a high figure of merit (FOM) is proposed. The device features a double-sided charge oxide-trench (DCT) and a trench gate extended to the buried oxide. First, the oxide trench causes multiple-dimensional depletion in the drift region, which not only improves the electric field (E-field) strength, but also enhances the reduced surface field effect. Second, self-adaptive charges are collected in the DCT, which enhances the E-field strength of the trench oxide. Third, the oxide trench folds the drift region along the vertical direction, reducing the device cell pitch. Fourth, one side of the DCT regions acts as the body contact of p-well to reduce cell pitch and specific on-resistance (Ron,sp) further. Compared with a trench gate lateral double-diffused MOSFET, the DCT MOSFET increases the breakdown voltage (BV) from 53 V to 158 V at the same cell pitch of 3.5 μm, or reduces the cell pitch by 60% and Ron,sp by 70% at the same BV. The FOM (FOM=BV2/Ron,sp) of the proposed structure is 23 MW/cm2. [ABSTRACT FROM AUTHOR]

We use linear entropy of an exact quantum state to study the entanglement between internal electronic states and external motional states for a two-level atom held in an amplitude-modulated and tilted optical lattice. Starting from an unentangled initial state associated with the regular ‘island’ of classical phase space, it is demonstrated that the quantum resonance leads to entanglement generation, the chaotic parameter region results in the increase of the generation speed, and the symmetries of the initial probability distribution determine the final degree of entanglement. The entangled initial states are associated with the classical ‘chaotic sea’, which do not affect the final entanglement degree for the same initial symmetry. The results may be useful in engineering quantum dynamics for quantum information processing. [ABSTRACT FROM AUTHOR]