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We give an analysis of the frequency distribution trends in the four lowest bands of two-dimensional square lattices formed by holographic lithography (HL) and in the lattices of the same kind but with regular dielectric columns with increasing filling ratios, and then present a comparative study on the left-handed properties in these two kinds of structures using plane wave expansion method and finite-difference time-domain (FDTD) simulations. The results show that the left-handed properties are more likely to exist in structures with large high-epsilon filling ratios or in a connected lattice.

Role of self-inductance in superconducting quantum interference device (SQUID) charge qubit is considered. It is found that when an SQUID charge qubit is coupled to a quantum LC resonator, the SQUID voltage operator equation is modified in accompanying with the modification of operator Faraday equation describing the inductance. It is shown that when the extra energy is applied to the junction, the mean phase will be squeezed according to a damping factor.

A variable-coefficient Kadomtsev–Petviashvili equation is investigated. The Painleve analysis leads to its explicit Painleve-integrable conditions. An auto-Backlund transformation and the bilinear form are presented via the truncated Painleve expansion and symbolic computation. Several families of new analytic solutions are presented, including the soliton-like and periodic solutions.

Based on the entangled state representation and a bosonic phase operator formalism, we tackle with Cooper-pair number-phase quantization for the inductance coupling circuit including Josephson junctions, and then investigate how Josephson current equations change due to the presence of the coupling inductance and obtain bosonic operator Faraday formula, as well as the corresponding number-phase uncertainty relation.

For two LC circuits with mutual-inductance, we introduce a new quantization scheme in the context of number-phase quantization through the standard Lagrangian formalism. The commutative relation between the charge operator and the magnetic flux operator is derived. Then we use the Heisenberg equation of motion to obtain the current and voltage equation across the inductance and capacity. The results clearly show how the current and voltage in a single LC circuit are affected by the circuit parameters and inductance coupling coefficient. In addition, adopting invariant eigen-operator method the energy-level gap of the dynamic Hamiltonian which describes two LC circuits with mutual-inductance is obtained.

A new ternary photopolymer system is used in fabricating photonic crystals (PhCs) with controlled defects by combination of single-photon and two-photon photopolymerization. The former process can produce PhCs in one-step recording with a low-power (tens mW) continuous-wave laser at 532 nm, while the latter can create desired defects. The preparation of the material, the optical setup and the preliminary experimental results are given. Compared with other methods, this approach is much more accessible and convenient for use of visible light and has advantages of making PhCs in a large scale quickly and economically and introducing any defects exactly, especially for three-dimensional structures.

Applicable in fluid dynamics and plasmas, a generalized variable-coefficient Korteweg–de Vries (vcKdV) model is investigated. The bilinear form and analytic N-soliton-like solution for such a model are derived by the Hirota method and Wronskian technique. Additionally, the bilinear auto-Backlund transformation between (N−1)-soliton-like and N-soliton-like solutions is verified.

Using the supersymmetry scheme including many-body interactions, we investigate the superdeformed (SD) bands of the nuclei in A similar to 60 mass region systematically. Quantitatively good results of the gamma-ray energy spectra and the dynamical moments of inertia are obtained. It shows that the supersymmetry approach is powerful to describe the generic rotational property of SD states of light nuclei.

Employing the method which can be used to demonstrate the infinite conservation laws for the standard Korteweg–de Vries (KdV) equation, we prove that the variable-coefficient KdV equation under the Painleve test condition also possesses the formal conservation laws.

We perform 9 MeV proton irradiation of a complementary metal oxide semiconductor (CMOS) image sensor at doses from 1×109 to 4×1010 cm−2. In general, the average brightness of dark output images increases with an increasing dose, and reaches the maximum at 1×1010 cm−2. The captured colour images become very blurry at 4×1010 cm−2. These can be explained by change of concentrations of irradiation-induced electron-hole pairs and vacancies in the various layers of CMOS image sensor calculated by the TRIM simulation programme with dose.

ZnO thin films were successfully deposited on Si (100) substrates by chemical vapour deposition (CVD) at atmospheric pressure (1 atm). The only solid source used here is zinc acetate, (CH3COO)2Zn, and the carrier gas is nitrogen. The sample, which was prepared at 550 degrees C during growth and then annealed in air at 900 degrees C, has only a ZnO (002) diffraction peak at 34.6 degrees with its FWHM of 0.23 degrees in the XRD pattern. The room-temperature PL spectrum shows a strong ultraviolet emission with the peak centred at 380 nm. We analysed the effects of many factors, such as the source, substrates, growth and annealing temperatures, and annealing ambience, on the structural and optical properties of our prepared ZnO films.

It has been found that after the irradiation by fast neutrons the electron density and mobility of two-dimensional (2D) electron gas at modulation-doped GaAs/AlGaAs heterostructure interface increased by 17% and 23%, respectively, and the Hall plateaus and the minima of Shubnikov-de Haas (S-dH) oscillation curves anomalously shifted over each other. The measurements after three weeks showed that the effects mentioned above had disappeared substantially, however, the stronger persistent photoconductivity still remained.

It has been found that the hydrogen-defect shallow donors do not appear, and some strong neutron radiation-induced Si-H IR bands, such as 1832 and 2054 cm-1 disappear; but the strength of some others, e.g. 1979 and 2065 cm-1 increases greatly for NTD FZ(H2) Si kept at room temperature for 3 years. These changes indicate that at room temperature simple point defects diffuse and interact, and hydrogen atoms trap the vacancy and vacancy cluster defects. This gives important information in the discussion of the micro-structures of the above Si-H IR bands.