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Conductive perovskite BaPbO3 (BPO) films as a potential electrode material of PZT capacitors used in ferroelectric random access memory are prepared by rf magnetron sputtering. An x-ray diffractometer and standard four probe method are employed to investigate the dependence of growth conditions on crystal structure and conductivity of BPO films. It is found that BPO films with perovskite phase can be obtained at substrate temperatures above 425° C, and the sample with the lowest resistivity is obtained at 450° C under pure argon atmosphere. Using this BPO film as electrode, ferroelectric properties of BPO/PZT/BPO and Pt/PZT/BPO sandwiched structures are evaluated. Their remanent polarization and coercive field are 36.6μC/cm2 (81.3kV/cm) and 36.9μC/cm2 (89.1 kV/cm), respectively. The coercive field of the former structure is lower than that of the latter, but remanent polarizations are almost the same. In addition, the results imply that BPO electrode is helpful to improve the fatigue resistance of PZT. The reasons are discussed.

We propose a new scheme to achieve sub-Rayleigh resolution of interference pattern with independent laser beams. We perform an experimental observation of a double-slit interference with two orthogonally polarized laser beams. The resolution of the interference pattern measured by a two-photon detection is doubled provided the two beams illuminate the double-slit with certain incident angles. The scheme is simple and can be in favor of both high intensity and perfect visibility.

The pseudorapidity and azimuthal angle distributions for charged particle produced in pp collisions at 400 GeV/c have been measured by using the LEBC films offered by CERN NA27 collaboration. The split-bin correlation functions have been calculated. The results show that the correlations are produced by resonance-like processes.

We report experimental studies on the photorefractive response of KNbO3 doubly doped with manganese and rubidium, iron and rubidium, respectively. Two-beam coupling response time in KNbO3:Mn:Rb is 3 to 10 times shorter while the two-beam coupling gain coefficient remains almost the same when compare with that in KNbO3:Mn. On the other hand, under similar conditions, two-beam coupling response time in KNbO3:Fe:Rb is 6 times faster than that in KNbO3:Fe.

Ba0.8Sr0.2TiO3/CoFe2O4(BST/CFO) magnetoelectric composite thin films of 2-2-type structures are prepared onto Pt/Ti/SiO2/Si substrates by a sol-gel process and spin coating technique. The structure of the prepared thin film is substrate/BST/CFO/.../CFO/BST. Three CFO ferromagnetic layers are separated from each other by a thin BST layer. The upper CFO layer is magnetostatically coupled with the lower CFO layer. Subsequent scanning electron microscopy investigations show that the prepared thin films exhibit good morphologies and have a compact structure, and the cross-sectional micrographs clearly display a multilayered nanostructure of multilayered thin films. The composite thin films exhibit good magnetic and ferroelectric properties. The spacing between ferromagnetic layers can be varied by adjusting the thickness of intermediate BST layer. It is found that the strength of magnetostatic coupling has a great impact on magnetoelectric properties of composite thin film; that is, the magnetoelectric voltage coefficient of the composite thin film tends to increase with the decrease of pacing between two neighboring CFO ferromagnetic layers as a result of magnetostatic coupling effect.

Recently, the Kochen?Specker theorem has been demonstrated and quantum contextuality has been observed experimentally by using special and independent quantum states. On the other hand, recent investigations have shown that a thermal light source can mimic the two-photon entangled source to perform the imaging effects. We perform an all-or-nothing?type Kochen-Specker experiment using the thermal light source and obtain the same results as those using quantum sources. The physical origin for such a phenomenon is analyzed.

Bi3.25La0.75 Ti3O12 (BLT) ferroelectric thin films are deposited by sol-gel method and annealed for crystallizaion in total 1sccm N2/O2 mixed gas with various ratio at 750°C for 30 min. The effect of crystallization ambient on the structural and ferroelectric properties of the BLT films is studied. The growth direction and grain size of BLT film are revealed to affect ferroelectric properties. After the BLT film is annealed in 20% O2, the largest Pr value is obtained, which is ascribed to an increase of random orientation and large grain size. The fatigue property is improved with the concentration of oxygen in the ambient increasing, which is ascribed to annealing in the ambient with high concentrated oxygen adequately decreasing the defects related to lack of oxygen.