1. Metallization of Cu 3 N Semiconductor under High Pressure
- Author
-
Yu Yong, Jin Chang-Qing, Yang Liu-Xiang, YU Ri-Cheng, LI Feng-Ying, and Zhao Jing-Geng
- Subjects
Semiconductor ,Materials science ,Orders of magnitude (specific energy) ,Condensed matter physics ,Electrical resistivity and conductivity ,business.industry ,Band gap ,High pressure ,General Physics and Astronomy ,First principle ,business ,Diamond anvil cell ,Ambient pressure - Abstract
Using the four-probe method, we investigate the electrical conductivity of Cu3N under high pressure with the diamond anvil cell. Cu3N is a semiconductor at ambient pressure showing a band gap about 1 eV. With the application of quasi-hydrostatic pressures, its resistance decreases dramatically over five orders of magnitude from ambient to 9 GPa. The compound became a metal at pressure about 5.5 GPa, which is in well agreement with the recent first principle calculation.
- Published
- 2006