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We study the Brownian motion of a single ellipsoidal particle diffusing in a narrow channel by video-microscopy measurement. The experiments allow us to obtain the trajectories of ellipsoids and measure the diffusion coefficients. It is found that the channel constraints lead to suppression of the particle motion, especially the perpendicular motion to the channel, and the long axis of the particle tends to be parallel to the channel. A stable stratification phenomenon is observed, which is rarely discussed in studies of spherical particles. We also derive an approximate solution of theoretical prediction with the method of reflections, and obtain numerical simulation results using finite element software. They are proven to be effective by comparing them with the experimental results. All of these indicate that the aspect ratio and size of ellipsoid, the width of channel, and the transverse position distinctly affect the Brownian motion of ellipsoids.

Aiming at the dispersion stability of nanofluids, we investigate the absorbency and the zeta potential of TiO2 and Al2O3 nanofluids under different pH values and different dispersant concentrations. The results show that in the mass fraction 0.05% alumina and 0.01% titanium dioxide nanosuspensions, the absolute value of the zeta potential and the absorbency of the two nanofluids with sodium dodecyl sulfate (SDS) dispersant are the highest at an optimal pH (pHAl2O3 ≈ 6.0, pHTiO2 ≈ 9.5) and that there is a good correlation between absorbency and zeta potential: the higher the absolute value of the zeta potential is, the greater the absorbency is, and the better the stability of the system is. The optimizing concentrations for SDS are 0.10% and 0.14%, respectively, at which the two nanofluids have the best dispersion results. The calculated DLVO interparticle interaction potentials verify the experimental results of the pH effect on the stability behavior.

According to the theory of optical films, we simulate the reflectivity of antireflection coatings (ARCs) for solar cells of Ga0.5In0.5P/GaAs/Ge based on an optical transfer matrix. In order to provide sufficient consideration of the refractive index dispersion effect of multilayer ARCs, we use multi-dimensional matrix data for reliable simulation. After the reflection curves are obtained, the effective average reflectance Re is introduced to optimize the film system by minimizing Re. Optimization of single layer (Al2O3), double layer (MgF2/ZnS) and triple layer (MgF2/Al2O3/ZnS) ARCs is realized by using this method for space and terrestrial applications. Effects of these ARCs are compared after optimization. These theoretical parameters can be used to guide experiments.

We propose an experimental setup to measure the threshold pressure gradient (TPG) of microchannels with different wettability surfaces by the static method in microchannels with diameters from 20 μm to 320 μm, and compare the TPG of microchannels with adsorption of cetyl trimethyl ammonium bromide (CTAB) with that without CTAB adsorption. The results show the existence of TPG in microchannels. The TPG of microchannels increases with decreasing hydrodynamic diameter, and the relation between TPG and diameter is in agreement with the single-log normalization. The TPG of a microchannel with CTAB adsorption decreases obviously as compared with the microchannel without CTAB adsorption. The TPG of microchannels with different wettabilities of boundary surface are different, and the resistance of liquid flow can be reduced by changing the wettability of boundary surfaces.

We obtain low-density charged InAs quantum dots with an emission wavelength below 1 mu m using a low InAs growth rate. The quantum dots have a bimodal size distribution with an emission wavelength of around 1340 nm and 1000 nm, respectively. We observe the photoluminescence of the singly charged exciton in the modulation doped quantum dots in 77 K.

A bilayer stacked InAs/GaAs quantum dot structure grown by molecular beam epitaxy on an In0.05Ga0.95As metamorphic buffer is investigated. By introducing a InGaAs Sb cover layer on the upper InAs quantum dots (QDs) layers, the emission wavelength of the QDs is extended successfully to 1.533 mu m at room temperature, and the density of the QDs is in the range of 4 x 10(9) -8 x 10(9) cm(-2). Strong photoluminescence (PL) intensity with a full width at half maximum of 28.6 meV of the PL spectrum shows good optical quality of the bilayer QDs. The growth of bilayer QDs on metamorphic buffers offers a useful way to extend the wavelengths of GaAs-based materials for potential applications in optoelectronic and quantum functional devices.

National Natural Science Foundation of China 60607016 60625405National Basic Research Programme of China National High Technology Research and Development Programme of China Supported partly by the National Natural Science Foundation of China under Grand Nos 60607016 and 60625405, the National Basic Research Programme of China and the National High Technology Research and Development Programme of China.