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The effects of annealing on the chemical states of N dopant, electrical, and optical properties of N-doped ZnO film grown by molecular beam epitaxy (MBE) are investigated. Both the as-grown ZnO:N film and the film annealed in N2 are of n-type conductivity, whereas the conductivity converts into p-type conductivity for the film annealed in O2. We suggest that the transformation of conductivity is ascribed to the change in ratio of the N molecular number on O site (N2)O to the N atom number on O site (NO) in ZnO:N films under the various annealed atmosphere. For the ZnO:N film annealed in N2, the percentage content of (N2)O is larger than that of NO, i.e. the ratio > 1, resulting in the n-type conductivity. However, in the case of the ZnO:N film annealed in O2, the percentage content of (N2)O is fewer than that of NO, i.e., the ratio < 1, giving rise to the p-type conductivity. There is an obvious difference between low-temperature (80 K) PL spectra of ZnO:N film annealed in N2 and that of ZnO:N film annealed in O2. An emission band located at 3.358 eV is observed in the spectra of the ZnO:N film after annealed in N2, this emission band is due to donor-bound exciton (D0X). After annealed in O2, the PL of the donor-bound exciton disappeared, an emission band located at 3.348 eV is observed, this emission band is assigned to acceptor-bound exciton (A0X).

The phenomena of electron, neutron, atomic and molecular diffraction have been studied by many experiments, and these experiments are explained by some theoretical works. In this paper, we study electronic double-slit diffraction with quantum mechanical approach. We can obtain the results: (1) When the slit width $a$ is in the range of $3\lambda\sim 50\lambda$ we can obtain the obvious diffraction patterns. (2) when the ratio of $\frac{d+a}{a}=n (n=1, 2, 3,\cdot\cdot\cdot)$, order $2n, 3n, 4n,\cdot\cdot\cdot$ are missing in diffraction pattern. (3)When the ratio of $\frac{d+a}{a}\neq n (n=1, 2, 3,\cdot\cdot\cdot)$, there isn't missing order in diffraction pattern. (4) We also find a new quantum mechanics effect that the slit thickness $c$ has a large affect to the electronic diffraction patterns. We think all the predictions in our work can be tested by the electronic double-slit diffraction experiment., Comment: 9pages, 14figures

Phenomena of electron, neutron, atomic and molecular diffraction have been studied in many experiments, and these experiments are explained by many theoretical works. We study neutron single-slit diffraction with a quantum mechanical approach. It is found that the obvious diffraction patterns can be obtained when the single-slit width a is in the range of 3λ~60λ. We also find a new quantum effect of the thickness of single-slit which can make a large impact on the diffraction pattern. The new quantum effect predicted in our work can be tested by the neutron single-slit diffraction experiment.

TiO2−xNx thin films are deposited onto Si(100) and quartz substrates by a rf magnetron sputtering method using a titanium metal disc as a target in Ar, N2, and O2 atmospheres. The substrate temperature is kept at 300°C. The O2 and Ar gas flow rates are kept to be constants and the N gas flow rate is varied. TiO2−xNx films with different N contents are characterized by x-ray diffraction and x-ray photoelectron spectroscopy. The results indicate that the TiO2−xNx thin films can be obtained at 13% N and 15% N contents in the film, and the films with mixed TiO2 and TiN crystal can be obtained at 13% N and 15% N contents in the film. In terms of the results of x-ray photoelectron spectroscopy, N 1s of β-N (396 eV) is the main component in the TiO2−xNx thin films. Because the energy level of β-N is positioned above the valence-band maximum of TiO2, an effective optical-energy gap decreases from 2.8 eV (for pure TiO2 film deposited by the same rf sputtering system) to 2.3 eV, which is verified by the optical-absorption spectra.

We investigate the origin of ultraviolet (UV) emission from Mg0.12Zn0.88O alloy thin films with a wurtzite structure fabricated on c-plane Al2O3 substrates by plasma assisted molecular beam epitaxy. At room temperature, the absorption edge and UV emission band of the Mg0.12Zn0.88O film shift to high-energy side compared with ZnO films. Temperature dependence of the photoluminescence spectra shows that the UV emission is composed of free exciton and neutral donor bound exciton emissions. Two-step dissociation processes of the UV emission are observed with the increasing temperature. The thermal quenching mechanism is attributed to the dissociation of the free exciton from the neutral donor bound exciton in the low temperature region and the dissociation of free electron and hole from the free exciton in the high temperature region.

A coupling structure of CdSe quantum dots (QDs) and a ZnCdSe quantum well (QW) is fabricated by using the molecular-beam epitaxy technique. The effect of temperature on the photoluminescence (PL) of the structure is studied. The results reveal that the activation energy of exciton dissociation in the coupling QDs/QW structure is much higher than that of simple CdSe QDs, which is attributed to the exciton tunnelling from the QW to QDs through a thin ZnSe barrier layer. The results also reveal that the position and width of the emission band of the QDs vary discontinuously at certain temperatures. This phenomenon is explained by the QD ionization and exciton tunnelling from the QW to the QDs. It is demonstrated that the coupling structure significantly improves the PL intensity of CdSe QDs.

Room-temperature P-band emission induced by an exciton–exciton collision process was observed in ZnO micro-rods. Both temperature- and excitation-intensity-dependent photoluminescence (PL) measurements were conducted. The excitation-intensity-dependent measurement illustrated that the P-band emission could occur at far lower excitation intensity than that reported in the literature. Higher-order transitions were also observed at the excitation intensity of 7.1 kW/cm2 or above. The temperature-dependent PL showed that the P-band emission process was thermally activated. It is suggested that both the density and activity of free excitons played important roles in the exciton–exciton collision process.

ZnTe films have been prepared on Si substrates by metal-organic chemical vapour deposition (MOCVD), and the temperature-dependent photoluminescence (PL) properties were investigated. The near-band-edge (NBE) emission of the ZnTe sample at 83 K shows an asymmetry line shape, which can be decomposed into two Gaussian lines labelled by FE and BE. Temperature-dependent PL intensity of the NBE peak shows two variation regions, and an expression with two dissociation channels fits well to the experimental data. The results of the temperature-dependent full width at half maximum (FWHM) and peak energy were well understood under the framework of the two-dissociation-channel model. That is, at low temperature, the emission from bound excitons governs the NBE peak, while above 157 K, the free exciton emission becomes dominant gradually. A simple model with three energy levels was employed to describe the variation in emission intensity of BE and FE with temperature.

We present a simple and useful method for preparing high-quality nanocrystalline ZnO thin films, i.e. the thermal oxidation of high-quality ZnS films prepared by the low-pressure metal-organic chemical vapour deposition technique. The x-ray diffraction measurements reveal that the nanocrystalline ZnO has a hexagonal wurtzite structure. Raman spectra show that the longitudinal optical phonon with the E1-mode appears at 578 cm-1. The multiple phonon scattering process is also observed, indicating the formation of a high-quality nanocrystalline ZnO thin film. The photoluminescence spectrum has a single emission peak at 3.264 eV from the free-exciton mission, under the condition of low excitation power at room temperature. However, when excitation intensities exceed the threshold of 150 kW/cm2, a new and narrow peak emerges at lower energies, which are attributed to exciton-exciton collisions, and is called the P line. The intensity of this peak increases superlinearly with the pumping power over a threshold value. This supplies strong evidence of stimulated emission. The multiple longitudinal cavity modes observed in the stimulated emission spectrum indicate the successful realization of optically pumped lasing from nanocrystalline ZnO films at room temperature.

A series of Cd0.44Zn0.56Se/ZnSe sandwich structures with different Cd0.44Zn0.56Se embedded layer thicknesses were fabricated by metal organic chemical vapor deposition. When the embedded layer thickness exceeded 3.0 nm, the photoluminescence spectra of the sample changed into the two-band structure from the one-band structure, and atomic force microscopy images indicate that Cd0.44Zn0.56Se quantum dots were formed. In the two-band photoluminescence spectrum, the band at the low energy side was attributed to be from quantum dots, and the high-energy one arose from the wetting layer. Thinning of the wetting layer with quantum dots forming was confirmed indirectly by the significant blue shift of the wetting-layer photoluminescence band compared to the photoluminescence band of the samples for which the Cd0.44Zn0.56Se layer thickness was less than 3.0 nm. This thinning arose from mass migration during the Stranski–Krastanow growth of Cd0.44Zn0.56Se quantum dots.

The room-temperature blue cathodoluminescence (CL) from highly Er-doped ZnO thin films has been studied by using different electron beam currents (EBCs). The ZnO:Er thin films used in our experiment were prepared by simultaneous evaporation from two sources. The x-ray diffraction spectra show that the thin films have a strong preferential c-axis (0002) orientation with a hexagonal crystalline structure. The blue emission at 455 nm originating from the intra-4f shell transition (4F5/24I15/2) in Er3+ ions was observed at room temperature. The nonlinear dependence of the CL intensity on the EBC shows a more intense blue emission above the threshold EBC of 0.6 µA, which is attributed to the phonon bottleneck effect.

We study the optical properties of ZnCdSe/ZnMgSe multiple quantum wells using photoluminescence (PL) and Raman scattering spectra. In the PL spectra, an intense emission band coming from the free exciton luminescence of the quantum wells can be observed from 80 K to 300 K. The exciton binding energy is evaluated by the dependence of PL intensity on the temperature, showing the behaviour of the better two-dimensional excitons. The result indicates that the enhancement of the confinement effect is due to containing Mg in the barrier layers. At room temperature, Raman scattering spectra are classified into confined optical modes and folded optical modes. This confirms the formation of a multilayer system with a higher crystalline quality.

A temperature-dependent photoluminescence measurement is performed in CdSe/ZnSe quantum dots with a ZnCdSe quantum well. We deduce the temperature dependence of the exciton linewidth and peak energy of the zero-dimensional exciton in the quantum dots and two-dimensional exciton in the CdSe wetting layer. The experimental data reveal a reduction of homogeneous broadening of the exciton line in the quantum dots in comparison with that in the two-dimensional wetting layer, which indicates the decrease of exciton and optical phonon coupling in the CdSe quantum dots.

We study the photoluminescence (PL) of ultra thin layer ZnSe quantum wells in ZnS barriers. Samples with different well widths are grown by vapour phase epitaxy and the PL spectra of these samples are measured by the excitation of a 500 W Hg lamp. The peak positions of the bands coming from the excitonic luminescence show a larger blueshift with respect to the energy of free excitons in the ZnSe bulk material. The observed variation of the full width at half maximum and peak position of the bands in the spectra with the well width are interpreted to the formation of the ZnSxSe1-x alloy layer due to the interdiffusion in the interfaces between ZnSe and ZnS. According to the behaviour of the excitons in the smaller conduction band offset, the exciton binding energy is estimated from the dependence of the PL intensity on the temperature. From this result, excitons seem to show nearly three-dimensional characteristics.

The effects of thermal annealing on photoluminescence (PL) and structural properties of a-Si1-xCx:H films deposited by plasma enhanced chemical vapour deposition from CH4+SiH4 mixtures are studied by using infrared, PL and transmittance-reflectance spectra. In a-SiC:H network, high-temperature annealing gives rise to the effusion of hydrogen from strongly bonded hydrogen in SiH, SiH2, (SiH2)n, SiCHn and CHn configurations and the break of weak C-C, Si-Si and C-Si bonds. A structural rearrangement will occur, which causes a significant correlation of the position and intensity of the PL signal with the annealing temperature. The redshift of the PL peak is related to the destruction of the confining power of barriers. However, the PL intensity does not have a significant correlation with the annealing temperature for a C-rich a-SiC:H network, which refers to the formation of π-bond cluster as increasing carbon content. It is indicated that the thermal stability of C-rich a-Si1-xCx:H films is better than that of Si-like a-Si1-xCx:H films. PACS: 78. 55. Hx, 78. 66. Jg, 61. 43. Dq