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We report for the first time on the observation of self-mode-locking in a diode pumped self-Q-switched (SQS) Nd3+,Cr4+:YAG laser. This phenomenon results from significant excited state absorption of the Cr4+ ions in the co-doped host during the SQS laser pulses. The self-mode-locking occurs already slightly above the SQS laser threshold. Experiments using relatively low saturable intensity achieved a modulation depth of more than 40%.

We carried out the operation of an intracavity frequency-doubled self-Q-switched Nd, Cr: YAG/KNbO3 946/473 nm microchip laser pumped by a Ti:sapphire laser. The overall cavity length was about 4 mm. The maximum average blue power of 12 mW was achieved with a repetition rate of 13 kHz at an absorbed pump power of 545 m W. The pulses of the 4 73 nm laser had a duration of 7 ns and a peak power of 132 W at this pump level. The conversion efficiency was 2.2% with respect to the absorbed pump power of a 808 nm laser.