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Your search keyword '"Shang, Sheng"' showing total 12 results
Start Over Author "Shang, Sheng" Publication Year Range Last 50 years Journal chinese physics letters Publisher iop publishing
12 results on '"Shang, Sheng"'

5. Finite Element Analysis of Convection in Growth Cell for Diamond Growth Using Ni-Based Solvent

Author

Yu, Tian, primary, Xiao-Peng, Jia, additional, Chuan-Yi, Zang, additional, Rui, Li, additional, Shang-Sheng, Li, additional, Hong-Yu, Xiao, additional, Ya-Fei, Zhang, additional, Guo-Feng, Huang, additional, Qi-Gang, Han, additional, Li-Qiu, Ma, additional, Yong, Li, additional, Xiao-Zhou, Chen, additional, Cong, Zhang, additional, and Hong-An, Ma, additional

Published
2009
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12. Synthesis and Characteristics of Type Ib Diamond Doped with NiS as an Additive.

Author

Jian-Kang Wang, Shang-Sheng Li, Ning Wang, Hui-Jie Liu, Tai-Chao Su, Mei-Hua Hu, Fei Han, Kun-Peng Yu, and Hong-An Ma

Subjects
*DIAMOND crystals, *DIAMONDS, *FOURIER transform infrared spectroscopy, *X-ray photoelectron spectroscopy, *N-type semiconductors, *SINGLE crystals
Abstract

Large diamond single crystals doped with NiS are synthesized under high pressure and high temperature. It is found that the effects on the surface and shape of the synthesized diamond crystals are gradually enhanced by increasing the NiS additive amount. It is noted that the synthesis temperature is necessarily raised to 1280°C to realize the diamond growth when the additive amount reaches 3.5% in the synthesis system. The results of Fourier transform infrared spectroscopy (FTIR) demonstrate that S is incorporated into the diamond lattice and exists in the form of C–S bond. Based on the FTIR results, it is found that N concentration in diamond is significantly increased, which are ascribed to the NiS additive. The analysis of x-ray photoelectron spectroscopy shows that S is present in states of C–S, S–O and C–S–O bonds. The relative concentration of S compared to C continuously increases in the synthesized diamonds as the amount of additive NiS increases. Additionally, the electrical properties can be used to characterize the obtained diamond crystals and the results show that diamonds doped with NiS crystals behave as n-type semiconductors. [ABSTRACT FROM AUTHOR]

Published
2019
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