1. Observation of a Flat Band in Silicene.
- Author
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Feng Ya, Feng Bao-Jie, Xie Zhuo-Jin, Li Wen-Bin, Liu Xu, Liu De-Fa, Zhao Lin, Chen Lan, Zhou Xing-Jiang, and Wu Ke-Hui
- Subjects
ELECTRONIC structure ,SCANNING tunneling microscopy ,FERMI level ,PHOTOELECTRON spectroscopy ,SILICON ,POINT defects ,QUANTUM perturbations ,DOMAIN boundaries - Abstract
The electronic structure of silicene on Ag(111) is studied by scanning tunneling microscopy and angle resolved photoemission spectroscopy. A flat band at 0.9 eV below the Fermi level is revealed. We find that the flat band is strongly suppressed near atomic defects, domain boundaries and step edges compared to that on the flat terraces. The discovery of the flat band and its sensitivity to local perturbations provides a new way to manipulate the electronic structure and properties of silicene. [ABSTRACT FROM AUTHOR]
- Published
- 2014
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