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The electrical characteristics and microstructures of β-Ga2O3 Schottky barrier diode (SBD) devices irradiated with swift heavy ions (2096 MeV Ta ions) have been studied. It was found that β-Ga2O3 SBD devices showed the reliability degradation after irradiation, including turn-on voltage Von, on-resistance Ron, ideality factor n, and the reverse leakage current density Jr. In addition, the carrier concentration of the drift layer was decreased significantly and the calculated carrier removal rates were 5 × 106–1.3 × 107 cm−1. Latent tracks induced by swift heavy ions were observed visually in the whole β-Ga2O3 matrix. Furthermore, crystal structure of tracks was amorphized completely. The latent tracks induced by Ta ions bombardments were found to be the reason for the decrease in carrier mobility and carrier concentration. Eventually, these defects caused the degradation of electrical characteristics of the devices. In terms of the carrier removal rates, the β-Ga2O3 SBD devices were more sensitive to swift heavy ions irradiation than SiC and GaN devices. [ABSTRACT FROM AUTHOR]

The various morphologies of tracks in MoS2 irradiated by swift heavy ions at normal and 30° incidence with 9.5–25.0 MeV/u 86Kr, 129Xe, 181Ta, and 209Bi ions were investigated by transmission electron microscopy. The diameter of ion tracks increases from 1.9 nm to 4.5 nm with increasing electronic energy loss. The energy loss threshold of the track formation in MoS2 is predicted as about 9.7 keV/nm based on the thermal spike model and it seems consistent with the experimental results. It is shown that the morphology of ion tracks is related to the penetration length of ions in MoS2. The formation process of ion tracks is discussed based on the cooperative process of outflow and recrystallization of the molten phase during rapid quenching. [ABSTRACT FROM AUTHOR]

The optical atomic clocks have the potential to transform global timekeeping, relying on the state-of-the-art accuracy and stability, and greatly improve the measurement precision for a wide range of scientific and technological applications. Herein we report on the development of the optical clock based on 171Yb atoms confined in an optical lattice. A minimum width of 1.92-Hz Rabi spectra has been obtained with a new 578-nm clock interrogation laser. The in-loop fractional instability of the 171Yb clock reaches 9.1 × 10−18 after an averaging over a time of 2.0 × 104 s. By synchronous comparison between two clocks, we demonstrate that our 171Yb optical lattice clock achieves a fractional instability of. [ABSTRACT FROM AUTHOR]

Sb2S3 solar cells with substrate structure usually suffer from pretty low short circuit current (JSC) due to the defects and poor carrier transport. The Sb2S3, as a one-dimensional material, exhibits orientation-dependent carrier transport property. In this work, a thin MoSe2 layer is directly synthesized on the Mo substrate followed by depositing the Sb2S3 thin film. The x-ray diffraction (XRD) patterns confirm that a thin MoSe2 layer can improve the crystallization of the Sb2S3 film and induce (hk1) orientations, which can provide more carrier transport channels. Kelvin probe force microscopy (KPFM) results suggest that this modified Sb2S3 film has a benign surface with less defects and dangling bonds. The variation of the surface potential of Sb2S3 indicates a much more efficient carrier separation. Consequently, the power conversion efficiency (PCE) of the substrate structured Sb2S3 thin film solar cell is improved from 1.36 % to 1.86 %, which is the best efficiency of the substrate structured Sb2S3 thin film solar cell, and JSC significantly increases to 13.6 mA/cm2. According to the external quantum efficiency (EQE) and C–V measurements, the modified crystallization and elevated built-in electric field are the main causes. [ABSTRACT FROM AUTHOR]

Ta2O5 films are prepared by e-beam evaporation with varied deposition temperatures, annealing temperatures, and annealing times. The effects of temperature on the optical properties, chemical composition, structure, and laserinduced damage threshold (LIDT) are systematically investigated. The results show that the increase of deposition temperature decreases the film transmittance slightly, yet annealing below 923 K is beneficial for the transmittance. The XRD analysis reveals that the film is in the amorphous phase when annealed below 873 K and in the hexagonal phase when annealed at 1073 K. While an interesting near-crystalline phase is found when annealed at 923 K. The LIDT increases with the deposition temperature increasing, whereas it increases firstly and then decreases as the annealing temperature increases. In addition, the increase of the annealing time from 4 h to 12 h is favourable to improving the LIDT, which is mainly due to the improvement of the O/Ta ratio. The highest LIDT film is obtained when annealed at 923 K, owing to the lowest density of defect. [ABSTRACT FROM AUTHOR]

This paper studies the molecular rotational excitation and field-free spatial alignment in a nonresonant intense laser field numerically and analytically by using the time-dependent Schrödinger equation. The broad rotational wave packets excited by the femtosecond pulse are defined in conjugate angle space, and their coefficients are obtained by solving a set of coupled linear equations. Both single molecule orientation angles and an ensemble of O2 and CO molecule angular distributions are calculated in detail. The numerical results show that, for single molecule highest occupied molecular orbital (HOMO) symmetry σ tends to have a molecular orientation along the laser polarization direction and the permanent dipole moment diminishes the mean of the orientation angles; for an ensemble of molecules, angular distributions provide more complex and additional information at times where there are no revivals in the single molecule plot. In particular, at the revival peak instant, with the increase of temperature of the molecular ensemble, the anisotropic angular distributions with respect to the laser polarization direction of the πg orbital gradually transform to the symmetrical distributions regarding the laser polarization vector and for two HOMO configurations angular distributions of all directions are confined within a smaller angle when the temperature of the molecular ensemble is higher. [ABSTRACT FROM AUTHOR]

Using a neutral N2 beam as target, this paper studies the dissociation of N+2 in intense femtosecond laser fields (45 fs, [?]1 x 1016 W/cm2) at the laser wavelength of 800 nm based on the time-of-flight mass spectra of N+ fragment ions. The angular distributions of N+ and the laser power dependence of N+ yielded from different dissociation pathways show that the dissociation mechanisms mainly proceed through the couplings between the metastable states (A, B and C) and the upper excited states of N+2. A coupling model of light-dressed potential energy curves of N+2 is used to interpret the kinetic energy release of N+. [ABSTRACT FROM AUTHOR]

In this paper, A12O3 ultrathin film used as the surface passivation layer for AlGaN/GaN high electron mobility transistor (HEMT) is deposited by thermal atomic layer deposition (ALD), thereby avoiding plasma-induced damage and erosion to the surface. A comparison is made between the surface passivation in this paper and the conventional plasma enhanced chemical vapor deposition (PECVD) SiN passivation. A remarkable reduction of the gate leakage current and a significant increase in small signal radio frequency (RF) performance are achieved after applying Al2O3+BCB passivation. For the Al2O3+BCB passivated device with a 0.7 μm gate, the value of fmax reaches up to 100 GHz, but it decreases to 40 GHz for SiN HEMT. The fmax/ft ratio (≥ 4) is also improved after Al2O3+BCB passivation. The capacitance–voltage (C–V) measurement demonstrates that Al2O3+BCB HEMT shows quite less density of trap states (on the order of magnitude of 1010 cm−2) than that obtained at commonly studied SiN HEMT. [ABSTRACT FROM AUTHOR]