Search

Control and detection of antiferromagnetic topological materials are challenging since the total magnetization vanishes. Here we investigate the magneto-optical Kerr and Faraday effects in bilayer antiferromagnetic insulator MnBi2Te4. We find that by breaking the combined mirror symmetries with either perpendicular electric field or external magnetic moment, Kerr and Faraday effects occur. Under perpendicular electric field, antiferromagnetic topological insulators (AFMTI) show sharp peaks at the interband transition threshold, whereas trivial insulators show small adjacent positive and negative peaks. Gate voltage and Fermi energy can be tuned to reveal the differences between AFMTI and trivial insulators. We find that AFMTI with large antiferromagnetic order can be proposed as a pure magneto-optical rotator due to sizable Kerr (Faraday) angles and vanishing ellipticity. Under external magnetic moment, AFMTI and trivial insulators are significantly different in the magnitude of Kerr and Faraday angles and ellipticity. For the qualitative behaviors, AFMTI shows distinct features of Kerr and Faraday angles when the spin configurations of the system change. These phenomena provide new possibilities to optically detect and manipulate the layered topological antiferromagnets.

Complexity and abundant dynamics may arise in locally-active systems only, in which locally-active elements are essential to amplify infinitesimal fluctuation signals and maintain oscillating. It has been recently found that some memristors may act as locally-active elements under suitable biasing. A number of important engineering applications would benefit from locally-active memristors. The aim of this paper is to show that locally-active memristor-based circuits can generate periodic and chaotic oscillations. To this end, we propose a non-volatile locally-active memristor, which has two asymptotically stable equilibrium points (or two non-volatile memristances) and globally-passive but locally-active characteristic. At an operating point in the locally-active region, a small-signal equivalent circuit is derived for describing the characteristics of the memristor near the operating point. By using the small-signal equivalent circuit, we show that the memristor possesses an edge of chaos in a voltage range, and that the memristor, when connected in series with an inductor, can oscillate about a locally-active operating point in the edge of chaos. And the oscillating frequency and the external inductance are determined by the small-signal admittance Y(iω). Furthermore, if the parasitic capacitor in parallel with the memristor is considered in the periodic oscillating circuit, the circuit generates chaotic oscillations.

This paper have performed molecular static calculations with the quantum corrected Sutten–Chen type many body potential to study size effects on the elastic modulus of Au nanowires with [100], [110] and [111] crystallographic directions, and to explore the preferential growth orientation of Au nanowires. The main focus of this work is the size effects on their surface characteristics. Using the common neighbour analysis, this paper deduces that surface region approximately consists of two layer atoms. Further, it extracts the elastic modulus of surface, and calculate surface energy of nanowire. The results show that for all three directions the Young's modulus of nanowire increases as the diameter increases. Similar trend has been observed for the Young's modulus of surface. However, the atomic average potential energy of nanowire shows an opposite change. Both the potential and surface energy of [110] nanowire are the lowest among all three orientational nanowires, which helps to explain why Au nanowires possess a [110] preferred orientation during the experimental growth proceeds.

Organic salts such as spiro-(1,1')-bipyrrolidinium tetrafluoroborate ([SBP][BF4]) dissolved in liquid acetonitrile (ACN) are a new kind of organic salt solution, which is expected to be used as an electrolyte in electrical double layer capacitors (EDLCs). To explore the physicochemical properties of the solution, an all-atom force field is established on the basis of AMBER parameter values and quantum mechanical calculations. Molecular dynamics (MD) simulations are carried out to explore the liquid structure and physicochemical properties of [SBP][BF4] electrolyte at room temperature. The computed thermodynamic and transport properties match the available experimental results very well. The microscopic structures of [SBP][BF4] salt solution are also discussed in detail. The method used in this work provides an efficient way of predicting the properties of organic salt solvent as an electrolyte in EDLCs.

Based on an objective identification technique for regional low temperature event (OITRLTE), the daily minimum temperature in China has been detected from 1960 to 2013. During this period, there were 60 regional extreme low temperature events (ERLTEs), which are included in the 690 regional low temperature events (RLTEs). The 60 ERLTEs are analyzed in this paper. The results show that in the last 50 years, the intensity of the ERLTEs has become weak; the number of lasted days has decreased; and, the affected area has become small. However, that situation has changed in this century. In terms of spatial distribution, the high intensity regions are mainly in Northern China while the high frequency regions concentrate in Central and Eastern China. According to the affected area of each event, the 60 ERLTEs are classified into six types. The atmospheric circulation background fields which correspond to these types are also analyzed. The results show that, influenced by stronger blocking highs of Ural and Lake Baikal, as well as stronger southward polar vortex and East Asia major trough at 500-hPa geopotential height, cold air from high latitudes is guided to move southward and abnormal northerly winds at 850 hPa makes the cold air blow into China along diverse paths, thereby forming different types of regional extreme low temperatures in winter.

In this paper, we investigate the effect of pressure on the growth mode of high quality (10-11) GaN using an epitaxial lateral over growth (ELO) technique by metal organic chemical vapor deposition (MOCVD). Two pressure growth conditions, high pressure (HP) 1013 mbar and low pressure growth (LP) 500 mbar, are employed during growth. In the high pressure growth conditions, the crystal quality is improved by decreasing the dislocation and stack fault density in the strip connection locations. The room temperature photoluminescence measurement also shows that the light emission intensity increases three times using the HP growth condition compared with that using the LP growth conditions. In the low temperature (77 K) photoluminescence, the defects-related peaks are very obvious in the low pressure growth samples. This result also indicates that the crystal quality is improved using the high pressure growth conditions.

Motivated by recent experimental realization of synthetic spin—orbit coupling in neutral quantum gases, we consider the quasi-two-dimensional rotating two-component Bose—Einstein condensates with anisotropic Rashba spin—orbit coupling subject to concentrically coupled annular potential. For experimentally feasible parameters, the rotating condensate exhibits a variety of rich ground state structures by varying the strengths of the spin—orbit coupling and rotational frequency. Moreover, the phase transitions between different ground state phases induced by the anisotropic spin—orbit coupling are obviously different from the isotropic one.

This paper reports that a dual-wavelength white light-emitting diode is fabricated by using a metal-organic chemical vapor deposition method. Through a 200-hours' current stress, the reverse leakage current of this light-emitting diode increases with the aging time, but the optical properties remained unchanged despite the enhanced reverse leakage current. Transmission electron microscopy and cathodeluminescence images show that indium atoms were assembled in and around V-shape pits with various compositions, which can be ascribed to the emitted white light. Evolution of cathodeluminescence intensities under electron irradiation is also performed. Combining cathodeluminescence intensities under electron irradiation and above results, the increase of leakage channels and crystalline quality degradation are realized. Although leakage channels increase with aging, potential fluctuation caused by indium aggregation can effectively avoid the impact of leakage channels. Indium aggregation can be attributed to the mechanism of preventing optical degradation in phosphor-free white light-emitting diode.

Taking account of the electron–electron (hole) and electron–hole interactions, the tunneling processes of the main quantum dot (QD) Coulomb-coupled with a second quantum dot embedded in n–n junction have been investigated. The eighteen resonance mechanisms involved in the tunneling processes of the system have been identified. It is found that the tunneling current depends sensitively on the electron occupation number in the second quantum dot. When the electron occupation number in the second dot is tiny, both the tunneling current peaks and the occupation number plateaus in the main QD are determined by the intra-resonance mechanism. The increase of the electron occupation number in the second dot makes the inter-resonance mechanism participate in the transport processes. The competition between the inter and intra resonance mechanisms persists until the electron occupation number in the second dot reaches around unity, leading to the consequence that the inter-resonance mechanisms completely dominate the tunneling processes.