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Mo, as a dopant, is doped into SbTe to improve its thermal stability. It is shown in this paper that the Mo-doped Sb2Te3 (Mo0.26Sb2Te3, MST) material possesses phase change memory (PCM) applications. MST has better thermal stability than Sb2Te3(ST) and will crystallize only when the annealing temperature is higher than 250 °C. With the good thermal stability, MST-based PCM cells have a fast crystallization time of 6 ns. Furthermore, endurance up to 4 × 105 cycles with a resistance ratio of more than one order of magnitude makes MST a promising candidate for PCM applications. [ABSTRACT FROM AUTHOR]

In this paper, chemical mechanical planarization (CMP) of amorphous Ge2Sb2Te5 (a-GST) in acidic H2O2 slurry is investigated. It was found that the removal rate of a-GST is strongly dependent on H2O2 concentration and gradually increases with the increase in H2O2 concentration, but the static etch rate first increases and then slowly decreases with the increase in H2O2 concentration. To understand the chemical reaction behavior of H2O2 on the a-GST surface, the potentiodynamic polarization curve, surface morphology and cross-section of a-GST immersed in acidic slurry are measured and the results reveal that a-GST exhibits a from active to passive behavior for from low to high concentration of H2O2. Finally, a possible removal mechanism of a-GST in different concentrations of H2O2 in the acidic slurry is described. [ABSTRACT FROM AUTHOR]

In this paper, chemical mechanical planarization (CMP) of amorphous Ge2Sb2Te5 (a-GST) in acidic H2O2 slurry is investigated. It was found that the removal rate of a-GST is strongly dependent on H2O2 concentration and gradually increases with the increase in H2O2 concentration, but the static etch rate first increases and then slowly decreases with the increase in H2O2 concentration. To understand the chemical reaction behavior of H2O2 on the a-GST surface, the potentiodynamic polarization curve, surface morphology and cross-section of a-GST immersed in acidic slurry are measured and the results reveal that a-GST exhibits a from active to passive behavior for from low to high concentration of H2O2. Finally, a possible removal mechanism of a-GST in different concentrations of H2O2 in the acidic slurry is described. [ABSTRACT FROM AUTHOR]

Heterojunctions composed of β-Ga2O3 and ZnO films are fabricated on sapphire substrates by using the laser molecular beam epitaxy method. The heterojunction possesses excellent rectifying characteristics with an asymmetry ratio over 105. Prominent solar-blind photoresponse effect is also observed in the formed heterojunction. The photodetector exhibits a self-powered behavior with a fast response speed (rise time and decay time are 0.035 s and 0.032 s respectively) at zero bias. The obtained high performance can be related to the built-in field driven photogenerated electron-hole separation. [ABSTRACT FROM AUTHOR]

Gallium oxide (Ga2O3), a typical ultra wide bandgap semiconductor, with a bandgap of ∼ 4.9 eV, critical breakdown field of 8 MV/cm, and Baliga’s figure of merit of 3444, is promising to be used in high-power and high-voltage devices. Recently, a keen interest in employing Ga2O3 in power devices has been aroused. Many researches have verified that Ga2O3 is an ideal candidate for fabricating power devices. In this review, we summarized the recent progress of field-effect transistors (FETs) and Schottky barrier diodes (SBDs) based on Ga2O3, which may provide a guideline for Ga2O3 to be preferably used in power devices fabrication. [ABSTRACT FROM AUTHOR]

Flexible electronic devices have attracted much attention due to their practical and commercial value. Integration of thin films with soft substrate is an effective way to fabricate flexible electronic devices. Ga2O3 thin films deposited directly on soft substrates would be amorphous mostly. However, the thickness of the thin film obtained by mechanical exfoliation method is difficult to control and the edge of the film is fragile and easy to be damaged. In this work, we fabricated free-standing Ga2O3 thin films using the water-soluble perovskite Sr3Al2O6 as a sacrificial buffer layer. The obtained Ga2O3 thin films were polycrystalline. The thickness and dimension of the films were controllable. A flexible Ga2O3 solar-blind UV photodetector was fabricated by transferring the free-standing Ga2O3 film on a flexible polyethylene terephthalate substrate. The results displayed that the photoelectric performances of the flexible Ga2O3 photodetector were not sensitive to bending of the device. The free-standing Ga2O3 thin films synthesized through the method described here can be transferred to any substrates or integrated with other thin films to fabricate electronic devices. [ABSTRACT FROM AUTHOR]

The MnFeP0.56Si0.44 compound is investigated by x-ray diffraction, magnetic measurements, and x-ray absorption fine structure spectroscopy. It crystallizes in Fe2P-type structure with the lattice parameters a = b = 5.9823(0) Å and c = 3.4551(1) Å and undergoes a first-order phase transition at the Curie temperature of 255 K. The Fe K edge and Mn K edge x-ray absorption fine structure spectra show that Mn atoms mainly reside at 3g sites, while 3f sites are occupied by Fe atoms. The distances between the absorbing Fe atom and the first and second nearest neighbor Fe atoms in a 3f-layer shift from 2.65 Å and 4.01 Å in the ferromagnetic state to 2.61 Å and 3.96 Å in the paramagnetic phase. On the other hand, the distance between the 3g-layer and 3f-layer changes a little as 2.66 Å–2.73 Å below the Curie temperature and 2.68 Å–2.75 Å above it. [ABSTRACT FROM AUTHOR]

Mo, as a dopant, is doped into SbTe to improve its thermal stability. It is shown in this paper that the Mo-doped Sb2Te3 (Mo0.26Sb2Te3, MST) material possesses phase change memory (PCM) applications. MST has better thermal stability than Sb2Te3(ST) and will crystallize only when the annealing temperature is higher than 250 °C. With the good thermal stability, MST-based PCM cells have a fast crystallization time of 6 ns. Furthermore, endurance up to 4 × 105 cycles with a resistance ratio of more than one order of magnitude makes MST a promising candidate for PCM applications. [ABSTRACT FROM AUTHOR]