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An open quantum battery (QB) model of a single qubit system charging in a coherent auxiliary bath (CAB) consisting of a series of independent coherent ancillae is considered. According to the collision charging protocol we derive a quantum master equation and obtain the analytical solution of QB in a steady state. We find that the full charging capacity (or the maximal extractable work (MEW)) of QB, in the weak QB-ancilla coupling limit, is positively correlated with the coherence magnitude of ancilla. Combining with the numerical simulations we compare with the charging properties of QB at finite coupling strength, such as the MEW, average charging power and the charging efficiency, when considering the bath to be a thermal auxiliary bath (TAB) and a CAB, respectively. We find that when the QB with CAB, in the weak coupling regime, is in fully charging, both its capacity and charging efficiency can go beyond its classical counterpart, and they increase with the increase of coherence magnitude of ancilla. In addition, the MEW of QB in the regime of relative strong coupling and strong coherent magnitude shows the oscillatory behavior with the charging time increasing, and the first peak value can even be larger than the full charging MEW of QB. This also leads to a much larger average charging power than that of QB with TAB in a short-time charging process. These features suggest that with the help of quantum coherence of CAB it becomes feasible to switch the charging schemes between the long-time slow charging protocol with large capacity and high efficiency and the short-time rapid charging protocol with highly charging power only by adjusting the coupling strength of QB-ancilla. This work clearly demonstrates that the quantum coherence of bath can not only serve as the role of “fuel” of QB to be utilized to improve the QB’s charging performance but also provide an alternative way to integrate the different charging protocols into a single QB.

The effects of stochastic perturbations and periodic excitations on the eutrophicated lake ecosystem are explored. Unlike the existing work in detecting early warning signals, this paper presents the most probable transition paths to characterize the regime shifts. The most probable transition paths are obtained by minimizing the Freidlin–Wentzell (FW) action functional and Onsager–Machlup (OM) action functional, respectively. The most probable path shows the movement trend of the lake eutrophication system under noise excitation, and describes the global transition behavior of the system. Under the excitation of Gaussian noise, the results show that the stability of the eutrophic state and the oligotrophic state has different results from two perspectives of potential well and the most probable transition paths. Under the excitation of Gaussian white noise and periodic force, we find that the transition occurs near the nearest distance between the stable periodic solution and the unstable periodic solution.

We analytically and numerically study the local dynamical characteristics of the Bessel beams reflected from an air—glass interface near the Brewster angle. A Taylor series expansion based on the angular spectrum component is applied to correct the reflection coefficients near the Brewster angle. Using a hybrid angular spectrum representation and vector potential method, the explicit expressions for the electric and magnetic field components of the reflected Bessel beams are derived analytically under paraxial approximation. The local energy, momentum, spin, and orbital angular momentum of the Bessel beams upon reflection near the Brewster angle are examined numerically by utilizing a canonical approach. Numerical simulation results show that the properties of these dynamical quantities for the Bessel beams near Brewster angle incidence change abruptly, and are significantly affected by their topological charge, half-cone angle, and polarization state. The present study has its importance in understanding the dynamical aspects of optical beams with vortex structure and diffraction-free nature during the reflection process.

Resonance effects caused by the photon–electron interaction are a focus of attention in semiconductor optoelectronics, as they are able to increase the efficiency of emission. GaN-on-silicon microdisks can provide a perfect cavity structure for such resonance to occur. Here we report GaN-based microdisks with different diameters, based on a standard blue LED wafer on a Si substrate. A confocal photoluminescence spectroscopy is performed to analyze the properties of all microdisks. Then, we systematically study the effects of radial modes and axial modes of these microdisks on photon–electron coupling efficiency by using three-dimensional finite-difference time-domain simulations. For thick microdisks, photon–electron coupling efficiency is found to greatly depend on the distributions of both the radial modes and the axial modes, and the inclined sidewalls make significant influences on the axial mode distributions. These results are important for realization of high-efficiency resonant emission in GaN-based microcavity devices.

The Mg acceptor activation mechanism and hole transport characteristics in AlGaN alloy with Mg doping concentration (∼ 1020 cm−3) grown by metal–organic chemical vapor deposition (MOCVD) are systematically studied through optical and electrical properties. Emission lines of shallow oxygen donors and (VIII complex)1− as well as V N 3 + and neutral Mg acceptors are observed, which indicate that self-compensation is occurred in Mg-doped AlGaN at highly doping levels. The fitting of the temperature-dependent Hall effect data shows that the acceptor activation energy values in Mg-doped Al x Ga1 − x N (x = 0.23, 0.35) are 172 meV and 242 meV, and the hole concentrations at room temperature are 1.2 × 1018 cm−3 and 3.3 × 1017 cm−3, respectively. Therefore, it is believed that there exists the combined effect of the Coulomb potentials of the dopants and screening of the Coulomb potentials by a high hole concentration. Moreover, due to the high ionized acceptors’ concentration and compensation ratio, the impurity conduction becomes more prominent and the valence band mobility drops sharply at low temperature.

Structural characteristics of AlN epilayer were investigated by high resolution x-ray diffraction (HRXRD) and transmission electron microscopy (TEM); the epilayer was grown on GaN/sapphire substrates using a high-temperature AlN interlayer by metal organic chemical vapor deposition technique. The mosaic characteristics including tilt, twist, heterogeneous strain, and correlation lengths were extracted by symmetric and asymmetric XRD rocking curves as well as reciprocal space map (RSM). According to Williamson–Hall plots, the vertical coherence length of AlGaN epilayer was calculated, which is consistent with the thickness of AlGaN layer measured by cross section TEM. Besides, the lateral coherence length was determined from RSM as well. Deducing from the tilt and twist results, the screw-type and edge-type dislocation densities are 1.0 and 1.8, which agree with the results observed from TEM.