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The effects of Bi flux and pressure of AsH3 on Bi incorporation, surface morphology and optical properties of InGaAsBi grown by gas source molecular beam epitaxy are studied. It is found that using relatively low pressure of AsH3 and high Bi flux can strengthen the effect on the incorporation of Bi and increase its content linearly with Bi flux until it nearly reaches a saturation value. The result from Rutherford backscattering spectroscopy (RBS) confirms that the Bi incorporation can increase up to 1.13%. By adjusting Bi and As flux, we could improve the surface morphology of InGaAsBi sample. Room temperature photoluminescence shows strong and broad light emission at energy levels much smaller than the InGaAs bandgap. [ABSTRACT FROM AUTHOR]

The structure of InP-based InxGa1−xAs/In0.52Al0.48As pseudomorphic high electron mobility transistor (PHEMT) was optimized in detail. Effects of growth temperature, growth interruption time, Si δ-doping condition, channel thickness and In content, and inserted AlAs monolayer (ML) on the two-dimensional electron gas (2DEG) performance were investigated carefully. It was found that the use of the inserted AlAs monolayer has an enhancement effect on the mobility due to the reduction of interface roughness and the suppression of Si movement. With optimization of the growth parameters, the structures composed of a 10 nm thick In0.75Ga0.25As channel layer and a 3 nm thick AlAs/In0.52Al0.48As superlattices spacer layer exhibited electron mobilities as high as 12500 cm2·V−1·s−1 (300 K) and 53500 cm2·V−1·s−1 (77 K) and the corresponding sheet carrier concentrations (Ns) of 2.8 × 1012 cm−2 and 2.9 × 1012 cm−2, respectively. To the best of the authors’ knowledge, this is the highest reported room temperature mobility for InP-based HEMTs with a spacer of 3 nm to date. [ABSTRACT FROM AUTHOR]