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We report the tip-induced superconductivity on the topological semimetal NbSb2, similar to the observation on TaAs2 and NbAs2. Belonging to the same family of MPn2, all these materials possess similar band structures, indicating that the tip-induced superconductivity may be closely related to their topological nature and share a common mechanism. Further analysis suggests that a bulk band should play the dominant role in such local superconductivity most likely through interface coupling. In addition, the compatibility between the induced superconductivity and tips' ferromagnetism gives an evidence for its unconventional nature. These results provide further clues to elucidate the mechanism of the tip-induced superconductivity observed in topological materials. [ABSTRACT FROM AUTHOR]

We report the tip-induced superconductivity on the topological semimetal NbSb2, similar to the observation on TaAs2 and NbAs2. Belonging to the same family of MPn2, all these materials possess similar band structures, indicating that the tip-induced superconductivity may be closely related to their topological nature and share a common mechanism. Further analysis suggests that a bulk band should play the dominant role in such local superconductivity most likely through interface coupling. In addition, the compatibility between the induced superconductivity and tips' ferromagnetism gives an evidence for its unconventional nature. These results provide further clues to elucidate the mechanism of the tip-induced superconductivity observed in topological materials. [ABSTRACT FROM AUTHOR]

Devices with copper phthalocyanine (CuPc):molybdenum trioxide (MoO3) co-evaporated layer were fabricated and the current–voltage (I–V) and capacitance–voltage (C–V) characteristics were measured. It has been found that for a given voltage, the current of the device with a co-evaporated layer is higher than those without the co-evaporated layer and it reaches the highest value if the ratio of MoO3 to CuPc is 1:1. Meanwhile, the C–V characteristics showed that only free holes exist in the function layer consisting of pure CuPc. However, charge transfer (CT) complexes exist in the function layer of a CuPc:MoO3 mixture. The charge transfer complexes do not contribute to the transport of the device efficiently under low applied fields but are disassociated into free carriers rapidly at applied fields higher than 1.7 × 105 V/cm, which greatly increases the conductivity. [ABSTRACT FROM AUTHOR]