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We investigate the formations of wurtzite (WZ) SiC nano polytypes in zinc blende (ZB) SiC nanofilms hetero-grown on Si-(100) substrates via low pressure chemical vapor deposition (LPCVD) by adjusting the Si/C ratio of the introduced precursors. Through SEM, TEM, and Raman characterizations, we find that the nanofilms consist of discrete WZ SiC nano polytypes and ZB SiC polytypes composed of WZ polytypes (WZ + ZB) and disordered ZB SiC polytypes, respectively, according to Si/C ratios of 0.5, 1.5, and 3. We attribute the WZ polytype formation to being due to a kinetic mechanism based on the Si/C surface saturation control. [ABSTRACT FROM AUTHOR]

We review the recently improved quantitative rescattering theory for nonsequential double ionization, in which the lowering of threshold due to the presence of electric field at the time of recollision has been taken into account. First, we present the basic theoretical tools which are used in the numerical simulations, especially the quantum theories for elastic scattering of electron as well as the processes of electron impact excitation and electron impact ionization. Then, after a brief discussion about the properties of the returning electron wave packet, we provide the numerical procedures for the simulations of the total double ionization yield, the double-to-single ionization ratio, and the correlated two-electron momentum distribution. [ABSTRACT FROM AUTHOR]

Fluorine plasma treatment was used prior to the Schottky metal deposition on the undoped Al0.45Ga0.55N, which aimed at the solar-blind wavelength. After fluorine plasma treatment and before depositing the Ni/Au Schottky, the samples were thermal annealed in the N2 gas at 400 °C. The reverse leakage current density of Al0.45Ga0.55N Schottky diode was reduced by 2 orders of magnitude at −10 V. The reverse leakage current density was reduced by 3 orders of magnitude after thermal annealing. Further capacitance–frequency analysis revealed that the fluorine-based plasma treatment reduces the surface states of AlGaN by one order of magnitude at different surface state energies. The capacitance–frequency analysis also proved that the concentration of carriers in AlGaN top is reduced through fluorine plasma treatment. [ABSTRACT FROM AUTHOR]

The sodium chloride methanol solution process is conducted on the conventional poly(3-hexylthiophene) (P3HT)/[6,6]-phenyl-C61-butyric acid methyl ester (PC61BM) polymer bulk heterojunction solar cells. The device exhibits a power conversion efficiency of up to 3.36%, 18% higher than that of the device without the solution process. The measurements of the active layer by x-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), and ultraviolet photoelectron spectroscopy (UPS) indicate a slight phase separation in the vertical direction and a sodium chloride distributed island-like interface between the active layer and the cathode. The capacitance–voltage (C–V) and impedance spectroscopy measurements prove that the sodium chloride methanol process can reduce the electron injection barrier and improve the interfacial contact of polymer solar cells. Therefore, this one-step solution process not only optimizes the phase separation in the active layers but also forms a cathode buffer layer, which can enhance the generation, transport, and collection of photogenerated charge carriers in the device simultaneously. This work indicates that the inexpensive and non-toxic sodium chloride methanol solution process is an efficient one-step method for the low cost manufacturing of polymer solar cells. [ABSTRACT FROM AUTHOR]

Recent progresses in magnetic tunnel junctions with perpendicular magnetic anisotropy (PMA) are reviewed and summarized. At first, the concept and source of perpendicular magnetic anisotropy (PMA) are introduced. Next, a historical overview of PMA materials as magnetic electrodes, such as the RE—TM alloys TbFeCo and GdFeCo, novel tetragonal manganese alloys Mn—Ga, L10-ordered (Co, Fe)/Pt alloy, multilayer film [Co, Fe, CoFe/Pt, Pd, Ni, Au]N, and ultra-thin magnetic metal/oxidized barrier is offered. The other part of the article focuses on the optimization and fabrication of CoFeB/MgO/CoFeB p-MTJs, which is thought to have high potential to meet the main demands for non-volatile magnetic random access memory. [ABSTRACT FROM AUTHOR]

We present a parallel numerical method of simulating the interaction of atoms with a strong laser field by solving the time-depending Schrödinger equation (TDSE) in spherical coordinates. This method is realized by combining constructing block diagonal matrices through using the real space product formula (RSPF) with splitting out diagonal sub-matrices for short iterative Lanczos (SIL) propagator. The numerical implementation of the solver guarantees efficient parallel computing for the simulation of real physical problems such as high harmonic generation (HHG) in these interaction systems. [ABSTRACT FROM AUTHOR]

A CaF2–CeF3 disordered crystal containing 1.06% of Er3+ ions was grown by the temperature gradient technique. Optical absorption and emission spectra recorded at room temperature and at 10 K, luminescence decay curve recorded at room temperature, and extended x-ray-absorption fine structure spectra were analyzed with an intention to assess the laser potential related to the transition of Er3+. In addition, the thermal diffusivity of the crystal was measured at room temperature. The analysis of room-temperature spectra revealed that the emission is long-lived with a radiative lifetime value of 5.5 ms, peak emission cross section of , and large spectral width pointing at the tunability of the emission wavelength in the region stretching from approximately 1480 nm to 1630 nm. The energies of the crystal field components for the ground and excited multiplets determined from low-temperature absorption and emission spectra made it possible to predict successfully the spectral position and shape of the room-temperature emission band. Based on the correlation of the optical spectra and dynamics of the luminescence decay, it was concluded that in contrast to Yb3+ ions in heavily doped CaF2 erbium ions in the CaF2–CeF3 crystal reside in numerous sites with dissimilar relaxation rates. [ABSTRACT FROM AUTHOR]

The momentum space coupled channels optical (CCO) method for positron scattering has been extended to study the scattering of positrons by metastable helium for impact energies in the range from the positronium threshold up to high energies. Both the positronium formation and ionization continuum channels are included in the calculations via a complex equivalent local potential. The positronium formation, ionization, elastic and excitation, and total scattering cross sections are all presented and compared with the available information. [ABSTRACT FROM AUTHOR]

The enhanced performance of a squaraine compound, with 2,4-bis[4-(N,N-diisobutylamino)-2,6-dihydroxyphenyl] squaraine as the donor and [6,6]-phenyl-C71-butyric acid methyl ester (PC71BM) as the acceptor, in solution-processed organic photovoltaic devices is obtained by using UV-ozone-treated MoO3 as the hole-collecting buffer layer. The optimized thickness of the MoO3 layer is 8 nm, at which the device shows the best power conversion efficiency (PCE) among all devices, resulting from a balance of optical absorption and charge transport. After being treated by UV-ozone for 10 min, the transmittance of the MoO3 film is almost unchanged. Atomic force microscopy results show that the treated surface morphology is improved. A high PCE of 3.99% under AM 1.5 G illumination (100 mW/cm2) is obtained. [ABSTRACT FROM AUTHOR]

The coherent control of field-free molecular orientation of CO with combined femtosecond single- and dual-color laser pulses has been theoretically studied. The effect of the delay time between the femtosecond single- and dual-color laser pulses is discussed, and the physical mechanism of the enhancement of molecular orientation with pre-alignment of the molecule is investigated. It is found that the basic mechanism is based on the creation of a rotational wave packet by the femtosecond single-color laser pulse. Furthermore, we investigate the interference between multiple rotational excitation pathways following pre-alignment with femtosecond single-color laser pulse. It is shown that such interference can lead to an enhancement of the orientation of CO molecule by a factor of 1.6. [ABSTRACT FROM AUTHOR]

4H-SiC junction barrier Schottky (JBS) diodes with a high-temperature annealed resistive termination extension (HARTE) are designed, fabricated and characterized in this work. The differential specific on-state resistance of the device is as low as 3.64 mΩ·cm2 with a total active area of 2.46 × 10−3 cm2. Ti is the Schottky contact metal with a Schottky barrier height of 1.08 V and a low onset voltage of 0.7 V. The ideality factor is calculated to be 1.06. Al implantation annealing is performed at 1250°C in Ar, while good reverse characteristics are achieved. The maximum breakdown voltage is 1000 V with a leakage current of 9 × 10−5 A on chip level. These experimental results show good consistence with the simulation results and demonstrate that high-performance 4H-SiC JBS diodes can be obtained based on the double HARTE structure. [ABSTRACT FROM AUTHOR]

A horizontally slotted photonic crystal nanobeam cavity with an embedded active nanopillar structure is proposed for ultrafast direct modulation. By designing the thicknesses of both the nanobeam and the horizontal slot layer, the quality factor (Q factor) and the mode volume (Vn) of the proposed cavity can be engineered independently. As a result, the spontaneous emission (SpE) rate is enhanced with a small Vn of 2.4 while the SpE rate and the cavity photon lifetime have an optimal Q factor of ∼ 1000. In our simulation, the modulation bandwidth could be enhanced up to 170 GHz with different emission linewidths of the active nanopillar. [ABSTRACT FROM AUTHOR]

10-kV 4H–SiC p-channel insulated gate bipolar transistors (IGBTs) are designed, fabricated, and characterized in this paper. The IGBTs have an active area of 2.25 mm2 with a die size of 3 mm × 3 mm. A step space modulated junction termination extension (SSM-JTE) structure is introduced and fabricated to improve the blocking performance of the IGBTs. The SiC p-channel IGBTs with SSM-JTE termination exhibit a leakage current of only 50 nA at −10 kV. To improve the on-state characteristics of SiC IGBTs, the hexagonal cell (H-cell) structure is designed and compared with the conventional interdigital cell (I-cell) structure. At an on-state current of 50 A/cm2, the voltage drops of I-cell IGBT and H-cell IGBT are 10.1 V and 8.3 V respectively. Meanwhile, on the assumption that the package power density is 300 W/cm2, the maximum permissible current densities of the I-cell IGBT and H-cell IGBT are determined to be 34.2 A/cm2 and 38.9 A/cm2 with forward voltage drops of 8.8 V and 7.8 V, respectively. The differential specific on-resistance of I-cell structure and H-cell structure IGBT are and , respectively. These results demonstrate that H-cell structure silicon carbide IGBT with SSM-JTE is a promising candidate for high power applications. [ABSTRACT FROM AUTHOR]

Kerfless technology is a promising alternative for reducing cost and providing flexible thin crystals in silicon-based semiconductors. In this work we propose a protruded seed substrate technology to prepare flexible monocrystalline Si thin film economically. Grooved seed substrate is fabricated by using SiNx thin film as a mask for the wet-etching and thermal oxidation process. After the SiNx layer on the wedged strip is removed by hot phosphoric acid, the pre-defined structured substrate is achieved with the top of the strip serving as the seed site where there is no oxide layer. And a preferred growth of epitaxial Si on the substrate is performed by introducing an intermittent feed method for silicon source gas. The technique in this paper obviously enhances the mechanical stability of the seed structure and the growth behavior on the seed sites, compared with our previous techniques, so this technique promises to be used in the industrial fabrication of flexible Si-based devices. [ABSTRACT FROM AUTHOR]

The layer transfer process is one of the most promising methods for low-cost and highly-efficient solar cells, in which transferrable mono-crystalline silicon thin wafers or films can be produced directly from gaseous feed-stocks. In this work, we show an approach to preparing seeded substrates for layer-transferrable silicon films. The commercial silicon wafers are used as mother substrates, on which periodically patterned silicon rod arrays are fabricated, and all of the surfaces of the wafers and rods are sheathed by thermal silicon oxide. Thermal evaporated aluminum film is used to fill the gaps between the rods and as the stiff mask, while polymethyl methacrylate (PMMA) and photoresist are used as the soft mask to seal the gap between the filled aluminum and the rods. Under the joint resist of the stiff and soft masks, the oxide on the rod head is selectively removed by wet etching and the seed site is formed on the rod head. The seeded substrate is obtained after the removal of the masks. This joint mask technique will promote the endeavor of the exploration of mechanically stable, unlimitedly reusable substrates for the kerfless technology. [ABSTRACT FROM AUTHOR]

The interface properties and electrical characteristics of the n-type 4H–SiC planar and trench metal–oxide–semiconductor (MOS) capacitors are investigated by measuring the capacitance voltage and current voltage. The flat-band voltage and interface state density are evaluated by the quasi-static method. It is not effective on further improving the interface properties annealing at 1250°C in NO ambient for above 1 h due to the increasing interface shallow and fast states. These shallow states reduce the effective positive fixed charge density in the oxide. For the vertical MOS capacitors on the () and () faces, the interface state density can be reduced by approximately one order of magnitude, in comparison to the result of the planar MOS capacitors on the (0001) face under the same NO annealing condition. In addition, it is found that Fowler–Nordheim tunneling current occurs at an oxide electric field of 7 MV/cm for the planar MOS device. However, Poole–Frenkel conduction current occurs at a lower electric field of 4 MV/cm for the trench MOS capacitor. This is due to the local field crowded at the trench corner severely causing the electrons to be early captured at or emitted from the SiO2/SiC interface. These results provide a reference for an in-depth understanding of the mobility-limiting factors and long term reliability of the trench and planar SiO2/SiC interfaces. [ABSTRACT FROM AUTHOR]

The 4-at.% Tm:Sc2SiO5 (Tm:SSO) crystal is successfully obtained by the Czochralski method. The optical properties and thermal conductivity of the crystal are investigated. The broad continuous wave (CW) laser output of (100)-cut Tm:SSO with the dimensions of 3 mm× 3 mm× 3 mm under laser diode (LD)-pumping is realized. The full width at half maximum (FWHM) of the laser emitting reaches up to 21 nm. The laser threshold of Tm:SSO is measured to be 0.43 W. Efficient diode-pumped CW laser performance of Tm:SSO is demonstrated with a slope efficiency of 25.9% and maximum output power of 934 mW. [ABSTRACT FROM AUTHOR]

Annealing effects on structural and compositional performances of Al2O3 thin films on 4H–SiC substrates are studied comprehensively. The Al2O3 films are grown by atomic layer deposition through using trimethylaluminum and H2O as precursors at 300 °C, and annealed at various temperatures in ambient N2 for 1 min. The Al2O3 film transits from amorphous phase to crystalline phase as annealing temperature increases from 750 °C to 768 °C. The refractive index increases with annealing temperature rising, which indicates that densification occurs during annealing. The densification and grain formation of the film upon annealing are due to crystallization which is relative with second-nearest-neighbor coordination variation according to the x-ray photoelectron spectroscopy (XPS). Although the binding energies of Al 2p and O 1s increase together during crystallization, separations between Al 2p and O 1s are identical between as-deposited and annealed sample, which suggests that the nearest-neighbour coordination is similar. [ABSTRACT FROM AUTHOR]

The effect of high-temperature annealing on AlN thin film grown by metalorganic chemical vapor deposition was investigated using atomic force microscopy, Raman spectroscopy, and deep ultra-violet photoluminescence (PL) with the excitation wavelength as short as ∼ 177 nm. Annealing experiments were carried out in either N2 or vacuum atmosphere with the annealing temperature ranging from 1200 °C to 1600 °C. It is found that surface roughness reduced and compressive strain increased with the annealing temperature increasing in both annealing atmospheres. As to optical properties, a band-edge emission peak at 6.036 eV and a very broad emission band peaking at about 4.7 eV were observed in the photoluminescence spectrum of the as-grown sample. After annealing, the intensity of the band-edge emission peak varied with the annealing temperature and atmosphere. It is also found that a much stronger emission band ranging from 2.5 eV to 4.2 eV is superimposed on the original spectra by annealing in either N2 or vacuum atmosphere. We attribute these deep-level emission peaks to the VAL—ON complex in the AlN material. [ABSTRACT FROM AUTHOR]