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We demonstrate that, by undersampling scanning object with a reconstruction algorithm related to compressed sensing, an image with the resolution exceeding the finest resolution defined by the numerical aperture of the system can be obtained. Experimental results show that the measurements needed to achieve sub-Rayleigh resolution enhancement can be less than 10% of the pixels of the object. This method offers a general approach applicable to point-by-point illumination super-resolution techniques.

This paper presents a three-dimensional (3D) coupled-mode model using the direct-global-matrix technique as well as Fourier synthesis. This model is a full wave, two-way three-dimensional model, and is therefore capable of providing accurate acoustic field solutions. Because the problem of sound propagation excited by a point source in an ideal wedge with perfectly reflecting boundaries is one of a few three-dimensional problems with analytical solutions, the ideal wedge problem is chosen in this work to validate the presented three-dimensional model. Numerical results show that the field results by analytical solutions and those by the presented model are in excellent agreement, indicating that the presented model can serve as a benchmark model for three-dimensional sound propagation problems involving a planar two-dimensional geometry as well as a point source.

A novel AlGaN/GaN high electron mobility transistor (HEMT) with a source-connected T-shaped field-plate (ST-FP HEMT) is proposed for the first time in this paper. The source-connected T-shaped field-plate (ST-FP) is composed of a source-connected field-plate (S-FP) and a trench metal. The physical intrinsic mechanisms of the ST-FP to improve the breakdown voltage and the FP efficiency and to modulate the distributions of channel electric field and potential are studied in detail by means of two-dimensional numerical simulations with Silvaco-ATLAS. A comparison to the HEMT and the HEMT with an S-FP (S-FP HEMT) shows that the ST-FP HEMT could achieve a broader and more uniform channel electric field distribution with the help of a trench metal, which could increase the breakdown voltage and the FP efficiency remarkably. In addition, the relationship between the structure of the ST-FP, the channel electric field, the breakdown voltage as well as the FP efficiency in ST-FP HEMT is analyzed. These results could open up a new effective method to fabricate high voltage power devices for the power electronic applications.

In this paper, the enhancement-mode AlGaN/GaN HEMT combined with the low damage recessed-gate etching and the optimized oxygen plasma treatment was fabricated. Scanning electron microscope/energy dispersive spectrometer (SEM/EDS) method and x-ray photoelectron spectroscopy (XPS) method were used to confirm the formation of oxides. Based on the experimental results, the obtained enhancement-mode HEMT exhibited a threshold voltage of 0.5 V, a high peak transconductance of 210 mS/mm, and a maximum drain current of 610 mA/mm at the gate bias of 4 V. Meanwhile, the on/off current ratio of enhancement-mode HEMT was as high as 108, drain induced barrier lowering (DIBL) was as low as 5 mV/V, and subthreshold swing (SS) of 80 mV/decade was obtained. Compared with the conventional HEMT, the Schottky reverse current of enhancement-mode HEMT was three orders of magnitude lower, and the off-state breakdown voltage of which was higher. In addition, a power gain cutoff frequency (f max) of the enhancement-mode HEMT was larger than that of the conventional one.

In this paper, the principle of discharge-based pulsed I–V technique is introduced. By using it, the energy and spatial distributions of electron traps within the 4-nm HfO2 layer have been extracted. Two peaks are observed, which are located at ΔE ~ −1.0 eV and −1.43 eV, respectively. It is found that the former one is close to the SiO2/HfO2 interface and the latter one is close to the gate electrode. It is also observed that the maximum discharge time has little effect on the energy distribution. Finally, the impact of electrical stress on the HfO2 layer is also studied. During stress, no new electron traps and interface states are generated. Meanwhile, the electrical stress also has no impact on the energy and spatial distribution of as-grown traps. The results provide valuable information for theoretical modeling establishment, material assessment, and reliability improvement for advanced semiconductor devices.

An exact solution based on the wavenumber integration method is proposed and implemented in a numerical model for the acoustic field in a Pekeris waveguide excited by either a point source in cylindrical geometry or a line source in plane geometry. Besides, an unconditionally stable numerical solution is also presented, which entirely resolves the stability problem in previous methods. Generally the branch line integral contributes to the total field only at short ranges, and hence is usually ignored in traditional normal mode models. However, for the special case where a mode lies near the branch cut, the branch line integral can contribute to the total field significantly at all ranges. The wavenumber integration method is well-suited for such problems. Numerical results are also provided, which show that the present model can serve as a benchmark for sound propagation in a Pekeris waveguide.

In this paper, a novel AlGaN/GaN HEMT with a Schottky drain and a compound field plate (SD-CFP HEMT) is presented for the purpose of better reverse blocking capability. The compound field plate (CFP) consists of a drain field plate (DFP) and several floating field plates (FFPs). The physical mechanisms of the CFP to improve the reverse breakdown voltage and to modulate the distributions of channel electric field and potential are investigated by two-dimensional numerical simulations with Silvaco-ATLAS. Compared with the HEMT with a Schottky drain (SD HEMT) and the HEMT with a Schottky drain and a DFP (SD-FP HEMT), the superiorities of SD-CFP HEMT lie in the continuous improvement of the reverse breakdown voltage by increasing the number of FFPs and in the same fabrication procedure as the SD-FP HEMT. Two useful optimization laws for the SD-CFP HEMTs are found and extracted from simulation results. The relationship between the number of the FFPs and the reverse breakdown voltage as well as the FP efficiency in SD-CFP HEMTs are discussed. The results in this paper demonstrate a great potential of CFP for enhancing the reverse blocking ability in AlGaN/GaN HEMT and may be of great value and significance in the design and actual manufacture of SD-CFP HEMTs.

Negative bias temperature instability (NBTI) has become a serious reliability issue, and the interface traps and oxide charges play an important role in the degradation process. In this paper, we study the recovery of NBTI systemically under different conditions in the P-type metal–oxide–semiconductor field effect transistor (PMOSFET), explain the various recovery phenomena, and find the possible processes of the recovery.

By investigating the interaction of an n-type silicon sample with the TM01 mode millimeter wave in a circular waveguide, a viable high-power TM01 millimeter wave sensor is proposed. Based on the hot electron effect, the silicon sample serving as a sensing element (SE) and appropriately mounted on the inner wall of the circular waveguide is devoted to the on-line measurement of a high-power millimeter wave pulse. A three-dimensional parallel finite-difference time-domain method is applied to simulate the wave propagation within the measuring structure. The transverse electric field distribution, the dependences of the frequency response of the voltage standing-wave ratio (VSWR) in the circular waveguide, and the average electric field amplitude within the SE on the electrophysical parameters of the SE are calculated and analyzed in the frequency range of 300–400 GHz. As a result, the optimal dimensions and specific resistance of the SE are obtained, which provide a VSWR of no more than 2.0, a relative sensitivity around 0.0046 kW−1 fluctuating within ± 17.3%, and a maximum enduring power of about 4.3 MW.

Correspondence imaging is a new modality of ghost imaging, which can retrieve a positive/negative image by simple conditional averaging of the reference frames that correspond to relatively large/small values of the total intensity measured at the bucket detector. Here we propose and experimentally demonstrate a more rigorous and general approach in which a ghost image is retrieved by calculating a Pearson correlation coefficient between the bucket detector intensity and the brightness at a given pixel of the reference frames, and at the next pixel, and so on. Furthermore, we theoretically provide a statistical interpretation of these two imaging phenomena, and explain how the error depends on the sample size and what kind of distribution the error obeys. According to our analysis, the image signal-to-noise ratio can be greatly improved and the sampling number reduced by means of our new method.

We investigate the effect of interaction, temperature, and anisotropic parameter on the quantum phase transitions in an anisotropic square-octagon lattice with fermions under the framework of the single band Hubbard model through using the combination of cellular dynamical mean field theory and a continuous time Monte Carlo algorithm. The competition between interaction and temperature shows that with the increase of the anisotropic parameter, the critical on-site repulsive interaction for the metal–insulator transition increases for fixed temperature. The interaction–anisotropic parameter phase diagram reveals that with the decrease of temperature, the critical anisotropic parameter for the Mott transition will increase for fixed interaction cases.

We demonstrate sub-Rayleigh limit imaging of an object via intensity correlation measurements. The image completely unaffected by the disturbance of diffraction-limit is achieved under the condition that the imaging system has an appropriate field of view. The resolution of this sub-Rayleigh limit imaging system is only tied to the lateral resolution of the illumination light.

The transport mechanism of reverse surface leakage current in the AlGaN/GaN high-electron mobility transistor (HEMT) becomes one of the most important reliability issues with the downscaling of feature size. In this paper, the research results show that the reverse surface leakage current in AlGaN/GaN HEMT with SiN passivation increases with the enhancement of temperature in the range from 298 K to 423 K. Three possible transport mechanisms are proposed and examined to explain the generation of reverse surface leakage current. By comparing the experimental data with the numerical transport models, it is found that neither Fowler–Nordheim tunneling nor Frenkel–Poole emission can describe the transport of reverse surface leakage current. However, good agreement is found between the experimental data and the two-dimensional variable range hopping (2D-VRH) model. Therefore, it is concluded that the reverse surface leakage current is dominated by the electron hopping through the surface states at the barrier layer. Moreover, the activation energy of surface leakage current is extracted, which is around 0.083 eV. Finally, the SiN passivated HEMT with a high Al composition and a thin AlGaN barrier layer is also studied. It is observed that 2D-VRH still dominates the reverse surface leakage current and the activation energy is around 0.10 eV, which demonstrates that the alteration of the AlGaN barrier layer does not affect the transport mechanism of reverse surface leakage current in this paper.

The degradation mechanism of enhancement-mode AlGaN/GaN high electron mobility transistors (HEMTs) fabricated by fluorine plasma ion implantation technology is one major concern of HEMT’s reliability. It is observed that the threshold voltage shows a significant negative shift during the typical long-term on-state gate overdrive stress. The degradation does not originate from the presence of as-grown traps in the AlGaN barrier layer or the generated traps during fluorine ion implantation process. By comparing the relationships between the shift of threshold voltage and the cumulative injected electrons under different stress conditions, a good agreement is observed. It provides direct experimental evidence to support the impact ionization physical model, in which the degradation of E-mode HEMTs under gate overdrive stress can be explained by the ionization of fluorine ions in the AlGaN barrier layer by electrons injected from 2DEG channel. Furthermore, our results show that there are few new traps generated in the AlGaN barrier layer during the gate overdrive stress, and the ionized fluorine ions cannot recapture the electrons.

The influence of PMOSFET gate length on the parameter degradation relations under negative bias temperature instability (NBTI) stress is studied. The threshold voltage degradation increases with reducing the gate length. By calculating the relations between the threshold voltage and the linear/saturation drain current, we obtain their correlation coefficients. Comparing the test result with the calculated linear/saturation current value, we obtain the ratio factors. The ratio factors decrease differently when the gate length diminishes. When the gate length reduces to some degree, the linear ratio factor decreases from greater than 1 to nearly 1, but the saturation factor decreases from greater than 1 to smaller than 1. This results from the influence of mobility and the velocity saturation effect. Moreover, due to the un-uniform distribution of potential damages along the channel, the descending slopes of the curve are different.

A horizontally slotted photonic crystal nanobeam cavity with an embedded active nanopillar structure is proposed for ultrafast direct modulation. By designing the thicknesses of both the nanobeam and the horizontal slot layer, the quality factor (Q factor) and the mode volume (Vn) of the proposed cavity can be engineered independently. As a result, the spontaneous emission (SpE) rate is enhanced with a small Vn of 2.4 while the SpE rate and the cavity photon lifetime have an optimal Q factor of ~ 1000. In our simulation, the modulation bandwidth could be enhanced up to 170 GHz with different emission linewidths of the active nanopillar.