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We report the synthesis of two noveldonor–acceptor copolymerspoly{[N, N′-bis(alkyl)-1,4,5,8-naphthalenediimide-2,6-diyl-alt-5,5′-di(thiophen-2-yl)-2,2′-(E)-2-(2-(thiophen-2-yl)vinyl)thiophene]} (PNVTs) based onnaphthalenediimide (NDI) acceptor and (E)-2-(2-(thiophen-2-yl)vinyl)thiophenedonor. The incorporations of vinyl linkages into polymer backbonesmaintain the energy levels of the lowest unoccupied molecular orbitsat −3.90 eV, therefore facilitating the electron injection.Moreover, the energy levels of the highest occupied molecular orbitsincrease from −5.82 to −5.61 eV, successfully decreasingthe hole injection barrier. Atomic force microscopy measurements indicatethat PNVTs thin films exhibit larger polycrystalline grains comparedwith that of poly{[N, N′-bis(2-octyldodecyl)-1,4,5,8-naphthalenediimide-2,6-diyl]-alt- 5,5′-(2,2′-bithiophene)}[P(NDI2OD-T2)], consistent with the stronger π–πstacking measured by grazing incidenceX-ray scatting. To optimize devices performance, field-effect transistors(FETs) with three devices configurations have been investigated. Theresults indicate that the electron mobility of the vinyl-containingPNVTs exhibit about 3–5 times higher than that of P(NDI2OD-T2).Additionally, the vinyl-linkages in PNVTs remarkably enhance ambipolartransport of their top-gate FETs, obtaining high hole and electronmobilities of 0.30 and 1.57 cm2V–1s–1, respectively, which are among the highest valuesreported to date for the NDI-based polymers. Most importantly, ambipolarinverters have been realized in ambient, exhibiting a high gain of155. These results provide important progresses in solution-processedambipolar polymeric FETs and complementary-like inverters. [ABSTRACT FROM AUTHOR]

In this paper, we report the synthesis and characterizationoftwo new D-A-D molecules (E)-5,5′-bis(5-(benzo[b]thiophen-2-yl)thiophen-2-yl)-1,1′-bis(2-ethyl-hexyl)-[3,3′-bipyrrolylidene]-2,2′(1H,1′H)-dione (BTBPD) and (E)-5,5′-bis- (5-(benzo[b]furan-2-yl)thiophen-2-yl)-1,1′-bis(2-ethylhexyl)-[3,3′-bipyrrolylidene]-2,2′(1H,1′H)-dione (BFBPD). They entail bipyrrolylidene-2,2′(1H,1′H)-dione (BPD, known as Pechmann dye) as theelectron-accepting core that is flanked by two benzo[b]thiophene moieties and two benzo[b]furan moieties,respectively. Crystal structures of BTBPDand BFBPDprovide solid evidence for the intermolecular donor–acceptor(D-A) interactions, which are favorable for improving charge transportperformance. Organic field-effect transistors (OFETs) were preparedbased on thin films of BTBPDand BFBPDthroughsolution-processed technique. OFETs of BTBPDexhibitrelatively high hole mobility up to 1.4 cm2V–1s–1with high on/off ratio up to 106. In comparison, the hole mobility of OFETs with BFBPD(0.14 cm2V–1s–1) is relatively low, because of the poor thin-film morphology andlow molecular ordering, even after annealing. Thin-film morphologicaland XRD studies were carried out to understand the variation of holemobilities after annealing at different temperatures. The presentstudies clearly demonstrate the potentials of BPDthatis planar and polar as the electron-acceptor moiety to build D-A moleculesfor organic semiconductors with good performance. [ABSTRACT FROM AUTHOR]